AlGaN channel high electron mobility transistors with regrown ohmic contacts
High power electronics using wide bandgap materials are maturing rapidly, and significant
market growth is expected in a near future. Ultra wide bandgap materials, which have an …
market growth is expected in a near future. Ultra wide bandgap materials, which have an …
Tunable metamaterial-based silicon waveguide
Y Han, J Lin, YS Lin - Optics Letters, 2020 - opg.optica.org
A tunable metamaterial (MM)-based silicon (Si) waveguide is presented that is composed of
an MM nanodisk array on a Si-on insulator substrate. A significant modulation efficiency of …
an MM nanodisk array on a Si-on insulator substrate. A significant modulation efficiency of …
AlN/GaN superlattice channel HEMTs on silicon substrate
S Liu, W Zhang, J Zhang, X Song, Y Wu… - … on Electron Devices, 2021 - ieeexplore.ieee.org
High-electron-mobility transistor (HEMT) with AlN/GaN superlattice (SL) channel has been
demonstrated on a silicon substrate. High OFF-state breakdown voltage V BR of 670 V (gate …
demonstrated on a silicon substrate. High OFF-state breakdown voltage V BR of 670 V (gate …
Au-free Al₀. ₄Ga₀. ₆N/Al₀. ₁Ga₀. ₉N HEMTs on silicon substrate with high reverse blocking voltage of 2 kV
Y Wu, W Zhang, J Zhang, S Zhao, J Luo… - … on Electron Devices, 2021 - ieeexplore.ieee.org
In this article, the Au-free complementary metal oxide semiconductor (CMOS) transistor
compatible AlGaN-channel high-electron-mobility transistors (HEMTs) on silicon substrate …
compatible AlGaN-channel high-electron-mobility transistors (HEMTs) on silicon substrate …
Investigations on Wide-Gap Al0.21Ga0.79N Channel MOS-HFETs With In0.12Al0.76Ga0.12N Barrier/Buffer and Drain Field-Plate
CS Lee, CT Cheng, JH Ke… - IEEE Journal of the …, 2023 - ieeexplore.ieee.org
This work investigates, for the first time, wide-gap Al0. 21Ga0. 79N channel metal-oxide-
semiconductor heterostructure field-effect transistors (MOS-HFETs) with In0. 12Al0. 76Ga0 …
semiconductor heterostructure field-effect transistors (MOS-HFETs) with In0. 12Al0. 76Ga0 …
Characterization of trap states in AlN/GaN superlattice channel high electron mobility transistors under total-ionizing-dose with 60Co γ-irradiation
S Liu, J Zhang, S Zhao, L Shu, X Song, C Wang… - Applied Physics …, 2022 - pubs.aip.org
In this Letter, the effects of trap states in AlN/GaN superlattice channel HEMTs (high electron
mobility transistors) under total ionizing dose with γ-irradiation have been systematically …
mobility transistors) under total ionizing dose with γ-irradiation have been systematically …
Novel 2000 V normally-off MOS-HEMTs using AlN/GaN superlattice channel
We demonstrate for the first time a GaN-based metal oxide semiconductor high electron
mobility transistor (MOS-HEMT) with AlN/GaN superlattice (SL) channels. This new channel …
mobility transistor (MOS-HEMT) with AlN/GaN superlattice (SL) channels. This new channel …
[PDF][PDF] Enhancement-mode characteristics of Al0. 65Ga0. 35N/Al0. 3Ga0. 7N/AlN/SiC MOS-HFETs
CS Lee, CL Li, WC Hsu, CY You… - IEEE J. Electron Devices …, 2021 - scholar.archive.org
ABSTRACT Widegap-channel Al0. 65Ga0. 35N/Al0. 3Ga0. 7N/AlN/SiC metal-oxide-
semiconductor heterostructure field-effect transistors (MOS-HFETs) with ultrasonic spray …
semiconductor heterostructure field-effect transistors (MOS-HFETs) with ultrasonic spray …
Design and material growth of AlGaN-channel two-dimensional-electron gas heterostructures employing strain-controlled quaternary AlGaInN barrier layers
D Hosomi, H Chen, T Egawa… - Japanese Journal of …, 2018 - iopscience.iop.org
In order to improve the thermal stability in AlGaN-channel two-dimensional electron gas
(2DEG) heterostructures, we newly designed strain-controlled quaternary AlGaInN barrier …
(2DEG) heterostructures, we newly designed strain-controlled quaternary AlGaInN barrier …
Off‐state breakdown in InAlN/AlN/GaN high electron mobility transistors
J Kuzmík, G Pozzovivo, JF Carlin… - … status solidi c, 2009 - Wiley Online Library
Abstract Unpassivated InAlN/AlN/GaN high electron mobility transistors off‐state breakdown
is analyzed for different gate‐to‐drain distances. The breakdown voltage linearly increases …
is analyzed for different gate‐to‐drain distances. The breakdown voltage linearly increases …