This review provides an overview of area-selective thin film deposition (ASD) with a primary
focus on vapor-phase thin film formation via chemical vapor deposition (CVD) and atomic …

Atomic layer deposition (ALD) is a vapor phase technique capable of producing a variety of
materials. It consists of the alternation of separate self-limiting surface reactions, which …

Area selective atomic layer deposition has the potential to significantly improve current
fabrication approaches by introducing a bottom-up process in which robust and conformal …

Transistors have already been made three-dimensional (3D), with device channels (ie, fins
in trigate field-effect transistor (FinFET) technology) that are taller, thinner, and closer …

Next generation 3D electronic devices will require novel processing methods. Area selective
atomic layer deposition (ALD) of robust films has the opportunity to play an important role in …

In this paper, a new route for a selective deposition of thin oxide by atomic layer deposition
is discussed. The proposed process is using super cycles made of an additional plasma …

(57) ABSTRACT A plurality of blocking dielectric portions can be formed between a memory
stack structure and an alternating stack of first material layers and second material layers by …

Recent advancements in additive manufacturing have enabled the preparation of free-
shaped 3D objects with feature sizes down to and below the micrometer scale. Among the …

The authors demonstrate that the addition of an ammonia coflow during the chemical vapor
deposition of MoC x N y, Fe, or Ru thin films at≤ 200 C from the metal carbonyl precursors …

Although there have been several demonstrations of area‐selective atomic layer deposition
(AS‐ALD) of dielectric on dielectric in metal/dielectric patterns, the reverse process of …