The ICT scene is dominated by short-range intra-datacenter interconnects and networking,
requiring high speed and stable operations at high temperatures. GaAs/AlGaAs vertical …

In this report, the internal self-heating characteristics for GaN-based micro-light emitting
diodes (LEDs) are studied by designing and comparing devices with different sizes of and …

In this report, we propose GaN-based vertical cavity surface emitting lasers with a p-GaN/n-
GaN/p-GaN (PNP-GaN) structured current spreading layer. The PNP-GaN current spreading …

We report long cavity (65λ) GaN-based vertical-cavity surface-emitting lasers (VCSELs) with
a topside dielectric concave mirror, an ion implanted current aperture, and a bottomside …

Double dielectric DBR based GaN-based micro cavity light emitting devices with two
different structures were fabricated, and their thermal characteristics were investigated. To …

For GaN-based vertical-cavity surface-emitting lasers (VCSELs), a suitable current
confinement layer is essential for high-performance devices. The effect of different current …

In this study, the effects of variation of thickness and the number of quantumwells as well as
the contact length were investigated. In this paper, a vertical cavity surfaceemitting laser was …

The purpose of this study was to investigate the feasibility of transesterifying waste oils using
alcohol and a catalyst to provide a sustainable fuel alternative. To ensure that the resulting …

In this paper, the thermal stability of GaAs heterojunction bipolar transistor (HBT) power
amplifier (PA) in a sub-6G band has been improved by a multi-source co-simulation method …

The objective of this article is to demonstrate a general approach to the problem of
designing a novel laser diode. This involves first understanding prior work in this and related …