Excimer laser crystallization of amorphous silicon has been extensively studied for
electronic applications. Most of the early works has been on thin film transistor fabrication …

The effect of KrF excimer laser energy density (below and above the ablation threshold),
number of shots and angle of laser incidence on the morphological reconstruction, structure …

The formation of nano-structure on an amorphised Si surface is studied upon annealing by a
nanosecond laser pulse of an excimer laser. The resulting structures are studied by means …

Excimer laser crystallization (ELC) is commonly employed to fabricate low-temperature
polycrystalline silicon. A time-resolved in-situ optical system with nanosecond response time …

The interaction of a transversely excited atmospheric (TEA) CO2 laser, pulse duration of
about 2μs (FWHM of initial spike= 120ns), with p-type single crystalline silicon doped by …

Calcium phosphate (CaP) coatings are used for obtaining a desired biological response.
Usually, CaP coatings on metallic substrates are crystallized by annealing at temperatures …

This paper presents a novel approach to make high-performance CMOS at low
temperatures. Fully functional devices are manufactured using back-end compatible …

As the best results reported to date, high-quality poly-silicon thin film materials with huge
grains have been fabricated on large-area glass substrates using the technique of excimer …

Excimer laser annealing (ELA) is frequently employed to fabricate low-temperature
polycrystalline silicon films on glass substrate. The grain size and crystallinity of …

Excimer laser irradiation was demonstrated to be effective for the crystallization of the
semiconducting form (aS) of amorphous hydrogenated carbon− germanium (a-GeXCY: H) …