Nitrogen incorporation effects on gain properties of GaInNAs lasers: Experiment and theory
A Thränhardt, I Kuznetsova, C Schlichenmaier… - Applied Physics …, 2005 - pubs.aip.org
Gain properties of GaInNAs lasers with different nitrogen concentrations in the quantum
wells are investigated experimentally and theoretically. Whereas nitrogen incorporation …
wells are investigated experimentally and theoretically. Whereas nitrogen incorporation …
Numerical study on gain and optical properties of AlGaInAs, InGaNAs, and InGaAsP material systems for 1.3-μm semiconductor lasers
YK Kuo, SH Yen, MW Yao, ML Chen, BT Liou - Optics communications, 2007 - Elsevier
In reference to real devices fabricated in laboratories, the optical properties of AlGaInAs,
InGaNAs, and InGaAsP semiconductor material systems for 1.3-μm semiconductor lasers …
InGaNAs, and InGaAsP semiconductor material systems for 1.3-μm semiconductor lasers …
Experimental evidence of the impact of nitrogen on carrier capture and escape times in InGaAsN/GaAs single quantum well
L Xu, D Patel, CS Menoni, JY Yeh… - IEEE Photonics …, 2012 - ieeexplore.ieee.org
We report our experimental results and theoretical analysis on carrier escape time in In 0.4
Ga 0.6 As 1-y N y/GaAs (y= 0; 0.005) ridge waveguide single-quantum-well (QW) lasers with …
Ga 0.6 As 1-y N y/GaAs (y= 0; 0.005) ridge waveguide single-quantum-well (QW) lasers with …
Carrier recombination dynamics investigations of strain-compensated InGaAsN quantum wells
L Xu, D Patel, CS Menoni, JM Pikal… - IEEE Photonics …, 2012 - ieeexplore.ieee.org
The time evolution of the photoluminescence (PL) of 1300-nm emitting
InGaAsN/GaAs/GaAsP strain-compensated single quantum well (QW) in the temperature …
InGaAsN/GaAs/GaAsP strain-compensated single quantum well (QW) in the temperature …
Simulation of 1300-nm In0. 4Ga0. 6As0. 986N0. 014/GaAs1− xNx quantum-well lasers with various GaAs1− xNx strain compensated barriers
YA Chang, HC Kuo, YH Chang, SC Wang - Optics communications, 2004 - Elsevier
In this article, the laser performance of the 1300-nm In0. 4Ga0. 6As0. 986N0. 014/GaAs1−
xNx quantum-well (QW) lasers with various GaAs1− xNx strain compensated barriers (x …
xNx quantum-well (QW) lasers with various GaAs1− xNx strain compensated barriers (x …
Investigation of optical gain and LI characteristics in (GaIn)(NAs)/GaAs lasers
J Pozo, T Houle, JM Rorison, T Jouhti… - … Lasers and Laser …, 2004 - spiedigitallibrary.org
GaInNAs quantum well lasers have attracted significant interest in recent years. Their
potential for operation at high temperatures without coolers and their application for low cost …
potential for operation at high temperatures without coolers and their application for low cost …
[PDF][PDF] The Intrinsic Frequency Response of 1.3-m InGaAsN Lasers in the Range T= 10 C–80 C
O Anton, LF Xu, D Patel, CS Menoni… - IEEE Photonics …, 2006 - wordpress.lehigh.edu
Optical modulation response experiments above threshold are carried out in ridge
waveguide InGaAs and InGaAsN (N= 0: 5%) in a temperature span of 10 C–80 C. The …
waveguide InGaAs and InGaAsN (N= 0: 5%) in a temperature span of 10 C–80 C. The …
Numerical study on InGaAsN/GaAs multiple-quantum-well laser with GaAsP and GaAsN barriers
YK Kuo, SH Yen, MW Yao, MC Tsai, ML Chen… - Applied Physics B, 2008 - Springer
In this work, the multiple-quantum-well InGaAsN laser structures with indirect-GaAsP and
direct-GaAsN barriers are investigated by using LASTIP simulation program. We vary the …
direct-GaAsN barriers are investigated by using LASTIP simulation program. We vary the …
三五族半導體發光元件結構優化之研究
張詒安， 王興宗 - 2007 - ir.lib.nycu.edu.tw
本論文旨在探討三五族光電半導體元件包含紫外線發光二極體(ultraviolet light-emitting diode,
LED), 紅光共振腔發光二極體(resonant-cavity LED), 850-nm 面射型雷射(vertical-cavity …
LED), 紅光共振腔發光二極體(resonant-cavity LED), 850-nm 面射型雷射(vertical-cavity …
The intrinsic frequency response of 1.3-/spl mu/m InGaAsN lasers in the range T= 10/spl deg/C-80/spl deg/C
O Anton, LF Xu, D Patel, CS Menoni… - IEEE Photonics …, 2006 - ieeexplore.ieee.org
Optical modulation response experiments above threshold are carried out in ridge
waveguide InGaAs and InGaAsN (N= 0.5%) in a temperature span of 10 degC-80 degC. The …
waveguide InGaAs and InGaAsN (N= 0.5%) in a temperature span of 10 degC-80 degC. The …