Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing
The modern-day computing technologies are continuously undergoing a rapid changing
landscape; thus, the demands of new memory types are growing that will be fast, energy …
landscape; thus, the demands of new memory types are growing that will be fast, energy …
Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature
J Lan, Z Li, Z Chen, Q Zhu, W Wang… - Advanced Electronic …, 2023 - Wiley Online Library
The search for high‐performance resistive random‐access memory (RRAM) devices is
essential to pave the way for highly efficient non‐Von Neumann computing architecture …
essential to pave the way for highly efficient non‐Von Neumann computing architecture …
Effects of Top and Bottom Electrodes Materials and Operating Ambiance on the Characteristics of MgFx Based Bipolar RRAMs
The effects of electrode materials (top and bottom) and the operating ambiances (open-air
and vacuum) on the MgFx-based resistive random-access memory (RRAM) devices are …
and vacuum) on the MgFx-based resistive random-access memory (RRAM) devices are …
Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO2/n++-Si RRAM Devices
In this work, we investigate the effect of temperature on the electrical characteristics of
Al/SiO2/n++-Si RRAM devices. We study the electroforming process and show that forming …
Al/SiO2/n++-Si RRAM devices. We study the electroforming process and show that forming …
[PDF][PDF] Discover Nano
The modern-day computing technologies are continuously undergoing a rapid changing
landscape; thus, the demands of new memory types are growing that will be fast, energy …
landscape; thus, the demands of new memory types are growing that will be fast, energy …
[PDF][PDF] Jasi nski, J. Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO2/n++-Si RRAM Devices. Micromachines 2022, 13, 1641
P Wisniewski, M Nieborek, A Mazurak - 2022 - researchgate.net
In this work, we investigate the effect of temperature on the electrical characteristics of
Al/SiO2/n++-Si RRAM devices. We study the electroforming process and show that forming …
Al/SiO2/n++-Si RRAM devices. We study the electroforming process and show that forming …
Investigations of Sic Doping Effects on the Performance Improvement of Zno-Based Rrams and Conduction Mechanism Analysis at Both High and Low Temperature
SY Chu, TJ Wang, PA Shih, KL Yeh, JH Wang… - Kuan-Lin and Wang, Jia … - papers.ssrn.com
In this experiment, SiC was doped with LZO at a Li concentration of 3 mol% using a co-
sputtering system. A bipolar RRAM for extreme temperatures was successfully fabricated by …
sputtering system. A bipolar RRAM for extreme temperatures was successfully fabricated by …
[引用][C] Effects of Top and Bottom Electrodes Materials and Operating Ambiance on the Characteristics of MgFx Based Bipolar RRAMs. Nanomaterials 2023, 13, 1127
NC Das, YP Kim, SM Hong, JH Jang - 2023 - europepmc.org
The effects of electrode materials (top and bottom) and the operating ambiances (openair
and vacuum) on the MgFx-based resistive random-access memory (RRAM) devices are …
and vacuum) on the MgFx-based resistive random-access memory (RRAM) devices are …