Effects of instrument imperfections on quantitative scanning transmission electron microscopy

FF Krause, M Schowalter, T Grieb, K Müller-Caspary… - Ultramicroscopy, 2016 - Elsevier
Several instrumental imperfections of transmission electron microscopes are characterized
and their effects on the results of quantitative scanning electron microscopy (STEM) are …

Field-dependent measurement of GaAs composition by atom probe tomography

E Di Russo, I Blum, J Houard… - Microscopy and …, 2017 - academic.oup.com
The composition of GaAs measured by laser-assisted atom probe tomography may be
inaccurate depending on the experimental conditions. In this work, we assess the role of the …

Atom probe tomography of nanoscale architectures in functional materials for electronic and photonic applications

AS Chang, LJ Lauhon - Current Opinion in Solid State and Materials …, 2018 - Elsevier
Microscopy has played a central role in the advancement of nanoscience and
nanotechnology by enabling the direct visualization of nanoscale structure, leading to …

Composition determination of semiconductor alloys towards atomic accuracy by HAADF-STEM

L Duschek, P Kükelhan, A Beyer, S Firoozabadi… - Ultramicroscopy, 2019 - Elsevier
This paper presents a comprehensive investigation of an extended method to determine
composition of materials by scanning transmission electron microscopy (STEM) high angle …

Strain analysis from nano-beam electron diffraction: Influence of specimen tilt and beam convergence

T Grieb, FF Krause, M Schowalter, D Zillmann, R Sellin… - Ultramicroscopy, 2018 - Elsevier
Strain analyses from experimental series of nano-beam electron diffraction (NBED) patterns
in scanning transmission electron microscopy are performed for different specimen tilts …

Angle-resolved STEM using an iris aperture: Scattering contributions and sources of error for the quantitative analysis in Si

T Grieb, FF Krause, K Müller-Caspary, S Firoozabadi… - Ultramicroscopy, 2021 - Elsevier
The angle-resolved electron scattering is investigated in scanning-transmission electron
microscopy (STEM) using a motorised iris aperture placed above a conventional annular …

Angle-dependence of ADF-STEM intensities for chemical analysis of InGaN/GaN

T Grieb, FF Krause, K Müller-Caspary, JP Ahl… - Ultramicroscopy, 2022 - Elsevier
In this paper we perform angular resolved annular-dark field (ADF) scanning-transmission
electron microscopy (STEM) to study the scattered intensity in an InGaN layer buried in GaN …

Dynamical diffraction of high-energy electrons investigated by focal series momentum-resolved scanning transmission electron microscopy at atomic resolution

HL Robert, I Lobato, FJ Lyu, Q Chen, S Van Aert… - Ultramicroscopy, 2022 - Elsevier
We report a study of scattering dynamics in crystals employing momentum-resolved
scanning transmission electron microscopy under varying illumination conditions. As we …

Influence of surface relaxation of strained layers on atomic resolution ADF imaging

A Beyer, L Duschek, J Belz, JO Oelerich, K Jandieri… - Ultramicroscopy, 2017 - Elsevier
Surface relaxation of thin transmission electron microscopy (TEM) specimens of strained
layers results in a severe bending of lattice planes. This bending significantly displaces …

[HTML][HTML] Atom counting based on Voronoi averaged STEM intensities using a crosstalk correction scheme

FF Krause, A Rosenauer - Ultramicroscopy, 2024 - Elsevier
If quantitative scanning transmission electron microscopy is used for very precise thickness
measurements with atomic resolution, it is commonly referred to as» atom counting «. Due to …