Effects of instrument imperfections on quantitative scanning transmission electron microscopy
Several instrumental imperfections of transmission electron microscopes are characterized
and their effects on the results of quantitative scanning electron microscopy (STEM) are …
and their effects on the results of quantitative scanning electron microscopy (STEM) are …
Field-dependent measurement of GaAs composition by atom probe tomography
The composition of GaAs measured by laser-assisted atom probe tomography may be
inaccurate depending on the experimental conditions. In this work, we assess the role of the …
inaccurate depending on the experimental conditions. In this work, we assess the role of the …
Atom probe tomography of nanoscale architectures in functional materials for electronic and photonic applications
Microscopy has played a central role in the advancement of nanoscience and
nanotechnology by enabling the direct visualization of nanoscale structure, leading to …
nanotechnology by enabling the direct visualization of nanoscale structure, leading to …
Composition determination of semiconductor alloys towards atomic accuracy by HAADF-STEM
This paper presents a comprehensive investigation of an extended method to determine
composition of materials by scanning transmission electron microscopy (STEM) high angle …
composition of materials by scanning transmission electron microscopy (STEM) high angle …
Strain analysis from nano-beam electron diffraction: Influence of specimen tilt and beam convergence
Strain analyses from experimental series of nano-beam electron diffraction (NBED) patterns
in scanning transmission electron microscopy are performed for different specimen tilts …
in scanning transmission electron microscopy are performed for different specimen tilts …
Angle-resolved STEM using an iris aperture: Scattering contributions and sources of error for the quantitative analysis in Si
The angle-resolved electron scattering is investigated in scanning-transmission electron
microscopy (STEM) using a motorised iris aperture placed above a conventional annular …
microscopy (STEM) using a motorised iris aperture placed above a conventional annular …
Angle-dependence of ADF-STEM intensities for chemical analysis of InGaN/GaN
In this paper we perform angular resolved annular-dark field (ADF) scanning-transmission
electron microscopy (STEM) to study the scattered intensity in an InGaN layer buried in GaN …
electron microscopy (STEM) to study the scattered intensity in an InGaN layer buried in GaN …
Dynamical diffraction of high-energy electrons investigated by focal series momentum-resolved scanning transmission electron microscopy at atomic resolution
We report a study of scattering dynamics in crystals employing momentum-resolved
scanning transmission electron microscopy under varying illumination conditions. As we …
scanning transmission electron microscopy under varying illumination conditions. As we …
Influence of surface relaxation of strained layers on atomic resolution ADF imaging
Surface relaxation of thin transmission electron microscopy (TEM) specimens of strained
layers results in a severe bending of lattice planes. This bending significantly displaces …
layers results in a severe bending of lattice planes. This bending significantly displaces …
[HTML][HTML] Atom counting based on Voronoi averaged STEM intensities using a crosstalk correction scheme
FF Krause, A Rosenauer - Ultramicroscopy, 2024 - Elsevier
If quantitative scanning transmission electron microscopy is used for very precise thickness
measurements with atomic resolution, it is commonly referred to as» atom counting «. Due to …
measurements with atomic resolution, it is commonly referred to as» atom counting «. Due to …