Ultra-wide bandgap semiconductor Ga2O3 based electronic devices are expected to
perform beyond wide bandgap counterparts GaN and SiC. However, the reported power …

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …

This work demonstrates multi-channel AlGaN/GaN Schottky barrier diodes (SBDs) with a
breakdown voltage (BV) over 10 kV, the highest BV reported in GaN devices to date. The …

An active-passivation p-GaN gate HEMT (AP-HEMT), featuring an active p-GaN passivation
layer extending into the drain-side access region, is demonstrated on a commercial E-mode …

This article reports GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs) with
substantially improved performance. Metal-2DEG sidewall n-ohmic contacts were deployed …

This article reports on two generations of GaN-on-sapphire super-heterojunction (SHJ)
transistors, aiming at the realization of 10-kV class power transistors with low static and …

In this work, we propose a simple and yet accurate physical model to describe the figures-of-
merit (FOMs) of lateral GaN power devices. While the performance limit of vertical devices is …

Super junctions (SJs) have enabled unprecedented performance in Silicon power devices,
which could be further improved by applying this concept to wide bandgap semiconductors …

The hot-electron-related reliability is an important issue for GaN power devices under harsh
operation condition or environment. These high-energy electrons can scatter toward the …

This letter reports the first controlled experimental study on the impact of charge-balance on
static and dynamic characteristics of GaN super-heterojunction Schottky barrier diodes (SHJ …