Latest wide-bandgap power devices are switching progressively faster compared with
existing silicon devices. Their accurate current measurements for either control or protection …

This paper examines dynamic temperature-sensitive electrical parameters (TSEPs) for SiC
MOSFETs. It is shown that the switching rate of the output current (dI DS/dt) coupled with the …

In this paper, a compact planar current sensor is developed to be used in active current
balancing applications for parallel-connected Silicon Carbide (SiC) MOSFETs. The …

A change regulation of variation in drain current (dID/dt) of silicon carbide (SiC) metal–oxide–
semiconductor field‐effect transistors (MOSFETs) and their temperature dependencies are …

We have developed a printed circuit board Rogowski coil for monitoring of current and
protection of high-voltage power modules and packages. It is small, thin, and inexpensive …

Wide bandgap devices (SiC and GaN) bring the potential for a great increase in power
density of power electronics, but also pose a challenge to the bandwidth of the current …

Compared with the traditional Rogowski coil, printed circuit board (PCB) Rogowski coil has
the advantages of high measurement accuracy, simple manufacturing process and low cost …

We developed a printed circuit board'Rogowski coil'to improve the reliability of power
modules and packages. For the design, we used a new tool for sensitivity and adopted a …

The accurate detection of high-frequency transient fault currents in overhead transmission
lines is the basis of malfunction detection and diagnosis. This paper proposes a novel …

Coaxial shunt resistors are very useful for measuring the ultra-fast current in wide-bandgap
device switching transients. One of their major drawbacks is the relatively large parasitic …