Mixed dimensional van der Waals heterostructure based on layered two-dimensional
molybdenum disulfide (MoS2) interfaced to gallium nitride (GaN) has attracted tremendous …

Manipulating and optimizing the pathway of the interfacial and band engineering for MoS2
with excellent nonlinear absorption and dynamics are very important for two-dimensional …

In this paper, the p-GaN/n-In 0.27 Al 0.73 N heterojunction light-emitting diode (LED) was
fabricated by radio frequency magnetron sputtering (RF-MS) and the electroluminescence …

Low turn-on (knee) voltage (∼ 0.3 V) Schottky-diode behavior of a four-layer (4L)
MoS2/GaN junction is achieved by optimizing the in situ interface preparation of the GaN …

Based on the density functional theory (DFT), the electronic, optical and thermoelectric
properties of the MoS2-GaN interface at three different distances have been investigated. In …

Abstract 2D materials such as Transition metal dichalcogenides (TMDs), MoS 2 and WS 2,
possess unique properties, namely tunable bandgap, novel optical and electronic …

Lithographic device fabrication is a crucial part in the characterization of novel 1-and-2-
dimensional (1D/2D) materials for electronic applications. In this defense, I will present …