GaSe thin films are obtained by evaporating GaSe crystals onto ultrasonically cleaned glass
substrates kept at room temperature under a pressure of∼ 10–5 Torr. The X‐ray analysis …

Rare earth doping increases the emission range and is an attractive candidate for sensing
applications because of its good infrared properties. Here (Dy) doped (GeSe 2) 80 (In 2 Se …

Sb2S3 thin films have been deposited by vacuum thermal evaporation onto glass substrates
at various substrate temperatures in the range of 30–240° C. Crushed powder of the …

Cu 2 HgI 4 powder has been prepared by precipitation from reactive chemical solutions. An
electron beam gun evaporation system was used to deposit the prepared powder in a thin …

Polycrystalline β‐GaSe thin films were obtained by the thermal evaporation of GaSe crystals
onto glass substrates kept at 300° C under a pressure of 10–5 Torr. The transmittance and …

GaSe thin films were deposited by thermal evaporation technique with and without Cd
doping. X-ray diffraction analysis showed that the crystallinity of doped and undoped films …

Stoichiometric bulk ingot materials of the ternary mixture Cd (1− x) MnxSe (0.05≤ x≤ 0.9)
were prepared by direct fusion of the constituent elements in vacuum sealed silica tubes. X …

A thin film of the ternary Ga 10 Ge 10 Te 80 compound has been deposited at room
temperature on a Corning 7059 glass substrate by the e-beam evaporation technique at …

The optical properties of amorphous GaSe thin films deposited onto tin oxide (TO) coated
glass substrates are presented for the purpose of using this material for the fabrication of …

Nearly stoichiometric thin films of the ternary AgSbSe2 compound have been deposited at
room temperature by conventional thermal evaporation of the presynthesized material onto …