Controlled spalling is a fast process that can mechanically exfoliate III-V semiconductor
layers from their host wafer substrates and has the potential to produce high power-density …

We report gallium arsenide (GaAs) growth rates exceeding 300 µm h− 1 using dynamic
hydride vapor phase epitaxy. We achieved these rates by maximizing the gallium to gallium …

Solar cells from III-V materials offer outstanding light conversion efficiency and power
densities and have a proven reliability record. Nevertheless, the utilization of III-V devices …

Ultrathin Ge single‐junction (1J) solar cells transferred onto a flexible substrate are
envisioned to open up a novel lattice‐matched thin‐film InGaP/(In) GaAs/Ge tandem solar …

Hydride vapor phase epitaxy (HVPE) is a III–V device fabrication technology that has
received attention owing to its low production costs. The properties of passivation layers …

III–V semiconductors form the most efficient single-and multijunction photovoltaics. Metal–
organic vapor-phase epitaxy, which uses toxic and pyrophoric gas-phase precursors, is the …

By reducing the thickness of the absorber layers, ultrathin GaAs solar cells can be fabricated
in a more cost‐effective manner using less source material and shorter deposition times. In …

We report the development of Ga0. 5In0. 5P/GaAs monolithic tandem solar cells grown by
dynamic hydride vapor phase epitaxy, a III‐V semiconductor growth alternative to …

Most recently, III-V based ultrathin solar cells have attracted considerable attention for their
inherent advantages, such as increased tolerance to defect recombination, efficient charge …

We demonstrate hydride vapor phase epitaxy (HVPE) of GaAs with unusually high growth
rates (RG) at low temperature and atmospheric pressure by employing a hydride-enhanced …