Non-collinear antiferromagnetic spintronics
Spintronics aims to go beyond the charge-based paradigm of silicon-based microelectronics
by utilizing the spin degree of freedom for memory, storage and computing applications …
by utilizing the spin degree of freedom for memory, storage and computing applications …
Spin–Orbit-Entangled Electronic Phases in 4d and 5d Transition-Metal Compounds
T Takayama, J Chaloupka, A Smerald… - Journal of the Physical …, 2021 - journals.jps.jp
Complex oxides with 4 d and 5 d transition-metal ions recently emerged as a new paradigm
in correlated electron physics, due to the interplay between spin–orbit coupling and electron …
in correlated electron physics, due to the interplay between spin–orbit coupling and electron …
Giant anisotropic magnetoresistance and nonvolatile memory in canted antiferromagnet Sr2IrO4
Antiferromagnets have been generating intense interest in the spintronics community, owing
to their intrinsic appealing properties like zero stray field and ultrafast spin dynamics. While …
to their intrinsic appealing properties like zero stray field and ultrafast spin dynamics. While …
Robust pinned magnetisation in A2Ir2O7 iridates, the case of Er2Ir2O7 and Lu2Ir2O7 flux-grown single crystals
D Staško, F Hájek, K Vlášková, J Kaštil, M Henriques… - Scientific Reports, 2024 - nature.com
In addition to complex spin-ice and spin-liquid states of rare-earth pyrochlore oxides,
A2Ir2O7 iridates have been recently proposed to host a cooling-field-controllable …
A2Ir2O7 iridates have been recently proposed to host a cooling-field-controllable …
[HTML][HTML] Spin–charge conversion in transition metal oxides
H Chen, D Yi - APL Materials, 2021 - pubs.aip.org
The interaction between spin and charge degrees of freedom offers a powerful tool to
manipulate magnetization in memories by the current induced spin–orbit torque. This novel …
manipulate magnetization in memories by the current induced spin–orbit torque. This novel …
[HTML][HTML] Perspective on solid-phase epitaxy as a method for searching novel topological phases in pyrochlore iridate thin films
Pyrochlore iridates exhibit various novel topological phenomena due to their topology and
electron correlation. Notably, pyrochlore iridate was the first proposed material system …
electron correlation. Notably, pyrochlore iridate was the first proposed material system …
[HTML][HTML] Strongly correlated and topological states in [111] grown transition metal oxide thin films and heterostructures
J Chakhalian, X Liu, GA Fiete - Apl Materials, 2020 - pubs.aip.org
We highlight recent advances in the theory, materials fabrication, and experimental
characterization of strongly correlated and topological states in [111] oriented transition …
characterization of strongly correlated and topological states in [111] oriented transition …
Strain engineering of the magnetic multipole moments and anomalous Hall effect in pyrochlore iridate thin films
The recent observation of the anomalous Hall effect (AHE) without notable magnetization in
antiferromagnets has suggested that ferromagnetic ordering is not a necessary condition …
antiferromagnets has suggested that ferromagnetic ordering is not a necessary condition …
Room-temperature angular-dependent topological Hall effect in chiral antiferromagnetic Weyl semimetal Mn3Sn
J Yan, X Luo, HY Lv, Y Sun, P Tong, WJ Lu… - Applied Physics …, 2019 - pubs.aip.org
Chiral antiferromagnetic (AFM) Weyl semimetal Mn 3 Sn shows a large anomalous Hall
effect (AHE) around room temperature, due to the Berry curvature generated by Weyl nodes …
effect (AHE) around room temperature, due to the Berry curvature generated by Weyl nodes …
Large spontaneous Hall effect in magnetic Weyl semimetallic (111) epitaxial thin films
M Ghosh, PS Anil Kumar - Physical Review B, 2023 - APS
Here, we present magnetotransport properties of Sm 2 Ir 2 O 7 (111) single-crystalline
epitaxial thin films grown with different strengths of compressive strain. A long-range …
epitaxial thin films grown with different strengths of compressive strain. A long-range …