Ferroelectric order in van der Waals layered materials

D Zhang, P Schoenherr, P Sharma… - Nature Reviews Materials, 2023 - nature.com
Structurally different from conventional oxide ferroelectrics with rigid lattices, van der Waals
(vdW) ferroelectrics have stable layered structures with a combination of strong intralayer …

Artificial neuron devices

K He, C Wang, Y He, J Su, X Chen - Chemical Reviews, 2023 - ACS Publications
Efforts to design devices emulating complex cognitive abilities and response processes of
biological systems have long been a coveted goal. Recent advancements in flexible …

Nanowires for UV–vis–IR optoelectronic synaptic devices

X Chen, B Chen, B Jiang, T Gao… - Advanced Functional …, 2023 - Wiley Online Library
Simulating biological synaptic functionalities through artificial synaptic devices opens up an
innovative way to overcome the von Neumann bottleneck at the device level. Artificial …

Multilayer Reservoir Computing Based on Ferroelectric α‐In2Se3 for Hierarchical Information Processing

K Liu, B Dang, T Zhang, Z Yang, L Bao, L Xu… - Advanced …, 2022 - Wiley Online Library
Dynamic physical systems such as reservoir computing (RC) architectures show a great
prospect in temporal information processing, whereas hierarchical information processing …

Van der Waals layer transfer of 2D materials for monolithic 3D electronic system integration: review and outlook

J Kim, X Ju, KW Ang, D Chi - ACS nano, 2023 - ACS Publications
Two-dimensional materials (2DMs) have attracted a great deal of interest due to their
immense potential for scientific breakthroughs and technological innovations. While some …

Memristor based on inorganic and organic two-dimensional materials: mechanisms, performance, and synaptic applications

K Liao, P Lei, M Tu, S Luo, T Jiang… - ACS Applied Materials …, 2021 - ACS Publications
A memristor is a two-terminal device with nonvolatile resistive switching (RS) behaviors.
Recently, memristors have been highly desirable for both fundamental research and …

[HTML][HTML] Ferroelectric field effect transistors: Progress and perspective

JY Kim, MJ Choi, HW Jang - APL Materials, 2021 - pubs.aip.org
Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation
devices as they can serve as a synaptic device for neuromorphic implementation and a one …

Memristive devices based on two-dimensional transition metal chalcogenides for neuromorphic computing

KC Kwon, JH Baek, K Hong, SY Kim, HW Jang - Nano-Micro Letters, 2022 - Springer
Abstract Two-dimensional (2D) transition metal chalcogenides (TMC) and their
heterostructures are appealing as building blocks in a wide range of electronic and …

Ferroelectric transistors based on shear-transformation-mediated rhombohedral-stacked molybdenum disulfide

TH Yang, BW Liang, HC Hu, FX Chen, SZ Ho… - Nature …, 2024 - nature.com
To develop low-power, non-volatile computing-in-memory device using ferroelectric
transistor technologies, ferroelectric channel materials with scaled thicknesses are required …

Ferroelectric field‐effect‐transistor integrated with ferroelectrics heterostructure

S Baek, HH Yoo, JH Ju, P Sriboriboon… - Advanced …, 2022 - Wiley Online Library
To address the demands of emerging data‐centric computing applications, ferroelectric field‐
effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing …