Defect and track formation in solids irradiated by superhigh-energy ions

FF Komarov - Physics-Uspekhi, 2003 - iopscience.iop.org
The state-of-the-art of research into processes and mechanisms of defect and track
formation in materials irradiated by fast ions is reviewed. It is shown that the nature and …

Дефектообразование и трекообразование в твердых телах при облучении ионами сверхвысоких энергий

ФФ Комаров - Успехи физических наук, 2003 - mathnet.ru
ФФКомаров, “Дефектообразование и трекообразование в твердых телах при облучении
ионами сверхвысоких энергий”, УФН, 173:12 (2003), 1287–1318; Phys. Usp., 46:12 (2003) …

Effect of high electronic energy deposition in semiconductors

W Wesch, A Kamarou, E Wendler - … Methods in Physics Research Section B …, 2004 - Elsevier
Track formation due to high electronic energy deposition during swift heavy ion irradiation is
well known in insulating materials as well as in some intermetallic compounds and metals …

[HTML][HTML] Excitonic model of track registration of energetic heavy ions in insulators

N Itoh, AM Stoneham - Nuclear Instruments and Methods in Physics …, 1998 - Elsevier
The consequence of generation of dense electronic excitation along the paths of energetic
heavy ions is discussed, emphasizing the fates of electron–hole pairs. It is pointed out that a …

Swift heavy ion induced structural changes in CdS thin films possessing different microstructures: A comparative study

VV Ison, AR Rao, V Dutta, PK Kulriya… - Journal of Applied …, 2009 - pubs.aip.org
This study is carried out to verify the role of thin film microstructure in determining the energy
relaxation processes of swift heavy ions in CdS polycrystalline thin films. Two sets of CdS …

Swift heavy ion irradiation induced modification of electrical characteristics of Au/n-Si Schottky barrier diode

R Singh, SK Arora, D Kanjilal - Materials Science in Semiconductor …, 2001 - Elsevier
Modification in the electrical transport properties of Au/n-Si (111) Schottky barrier diode
(SBD) by swift heavy ion (SHI) irradiation has been investigated using in situ capacitance …

MeV ion-induced movement of lattice disorder in single crystalline silicon

P Sen, J Akhtar, FM Russell - Europhysics Letters, 2000 - iopscience.iop.org
We provide experimental evidence for the transport of atomic disorder over large distances,
in device grade single-crystalline silicon, following irradiation with 200 MeV silver ions. Pile …

Subthreshold radiation-induced processes in the bulk and on surfaces and interfaces of solids

N Itoh - Nuclear Instruments and Methods in Physics Research …, 1998 - Elsevier
A review is given on the processes induced under irradiation by electronic encounters and
by elastic encounters below the knock-on threshold. It is pointed out that electronic …

Enhanced light absorption of amorphous silicon thin film by substrate control and ion irradiation

F Yuan, Z Li, T Zhang, W Miao, Z Zhang - Nanoscale research letters, 2014 - Springer
Large-area periodically aligned silicon nanopillar (PASiNP) arrays were fabricated by
magnetic sputtering with glancing angle deposition (GLAD) on substrates coated by a …

Micro-Raman spectroscopy characterization of silicon with different structures irradiated with energetic Bi-ions

Y Zhu, C Yao, J Wang, H Zhu, T Shen, X Gao… - Nuclear Instruments and …, 2015 - Elsevier
Researches of irradiation effects on silicon possess not only fundamental interests but also
potential application prospects. Comparison studies about structural modification of silicon …