Emissive displays based on light‐emitting diodes (LEDs), with high pixel density, luminance,
efficiency, and large color gamut, are of great interest for applications such as watches …

The physics of carrier recombinations in III-nitride light emitters are reviewed, with an
emphasis on experimental investigations. After a discussion of various methods of …

This work describes a small-signal microwave method for determining the differential carrier
lifetime and transport effects in electrically injected InGaN/GaN light-emitting diodes (LEDs) …

Thermal droop is investigated in high-quality InGaN light-emitting diodes (LEDs). To
determine whether it is caused by intrinsic variations in recombination or by transport effects …

The physical process driving low-current non-radiative recombinations in high-quality III-
nitride quantum wells is investigated. Lifetime measurements reveal that these …

Multiphysics processes such as recombination dynamics in the active region, carrier
injection and transport, and internal heating may contribute to thermal and efficiency droop …

An all-optical measurement of differential carrier lifetimes is performed in a specially
designed single-quantum-well structure. The measurement reveals the complex carrier …

The recombination rates in InGaN/AlGaN/GaN multiple quantum wells (MQWs) emitting in
the green-yellow and grown with different Al compositions in the AlGaN interlayer (IL) are …

This study aims to elucidate the carrier dynamics behind thermal droop in GaInN-based blue
light-emitting diodes (LEDs) by separating multiple physical factors. To this end, first, we …

A method for measuring the distribution profile of the 3-dB frequencies of
electroluminescence (EL) over the area of the light-emitting diode (LED) chip is presented …