How to report and benchmark emerging field-effect transistors

Z Cheng, CS Pang, P Wang, ST Le, Y Wu… - Nature …, 2022 - nature.com
The use of organic, oxide and low-dimensional materials in field-effect transistors has now
been studied for decades. However, properly reporting and comparing device performance …

A researcher's perspective on unconventional lab-to-fab for 2D semiconductor devices

SA Iyengar, S Bhattacharyya, S Roy, NR Glavin… - ACS …, 2023 - ACS Publications
Current silicon technology is on the verge of reaching its performance limits. This aspect,
coupled with the global chip shortage, makes a solid case for steering our attention toward …

A Review on Chemical Vapour Deposition of Two-Dimensional MoS2 Flakes

L Seravalli, M Bosi - Materials, 2021 - mdpi.com
Two-dimensional (2D) materials such as graphene, transition metal dichalcogenides, and
boron nitride have recently emerged as promising candidates for novel applications in …

Calcium fluoride as high-k dielectric for 2D electronics

C Wen, M Lanza - Applied Physics Reviews, 2021 - pubs.aip.org
Calcium fluoride is a dielectric material with a wide bandgap ($12.1 eV) and a relatively high
dielectric constant ($6.8) that forms a van der Waals interface with two-dimensional (2D) …

[HTML][HTML] Atomic-level defect modulation and characterization methods in 2D materials

OF Ngome Okello, DH Yang, YS Chu, S Yang… - APL Materials, 2021 - pubs.aip.org
Two-dimensional (2D) materials are attracting increasing research interest owing to their
distinct tunable physical properties. Moreover, the ubiquitous defects in 2D materials offer an …

Aligned carbon nanotube–based electronics on glass wafer

X Cheng, Z Pan, C Fan, Z Wu, L Ding, L Peng - Science Advances, 2024 - science.org
Carbon nanotubes (CNTs), due to excellent electronic properties, are emerging as a
promising semiconductor for diverse electronic applications with superiority over silicon …

Enhanced Optical Response of SnS/SnS2 Layered Heterostructure

DY Lin, HP Hsu, KH Liu, PH Wu, YT Shih, YF Wu… - Sensors, 2023 - mdpi.com
The SnS/SnS2 heterostructure was fabricated by the chemical vapor deposition method. The
crystal structure properties of SnS2 and SnS were characterized by X-ray diffraction (XRD) …

Insights into Structural, Electronic, and Transport Properties of Pentagonal PdSe2 Nanotubes Using First-Principles Calculations

NT Tien, PTB Thao, NH Dang, ND Khanh, VK Dien - Nanomaterials, 2023 - mdpi.com
One-dimensional (1D) novel pentagonal materials have gained significant attention as a
new class of materials with unique properties that could influence future technologies. In this …

Schottky barrier reduction on optoelectronic responses in heavy ion irradiated WSe 2 memtransistors

S Zhang, L Xu, S Gao, P Hu, J Liu, J Zeng, Z Li, P Zhai… - Nanoscale, 2024 - pubs.rsc.org
Two-dimensional transition metal dichalcogenide-based memtransistors provide simulation,
sensing, and storage capabilities for applications in a remotely operated aerospace …

Quasi-dry layer transfer of few-layer MBE-grown MoTe2 sheets for optoelectronic applications

N Chaudhary, T Khan, K Bhatt, R Singh - Sensors and Actuators A …, 2024 - Elsevier
Achieving precise control over the growth of fully covered MoTe 2 on a substrate is a crucial
requirement for advancing device fabrication in the future. However, this goal continues to …