[HTML][HTML] A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation
The Boltzmann transport equation is commonly considered to be the best semi-classical
description of carrier transport in semiconductors, providing precise information about the …
description of carrier transport in semiconductors, providing precise information about the …
[图书][B] Compact hierarchical bipolar transistor modeling with HICUM
M Schröter, A Chakravorty - 2010 - World Scientific
Compact Hierarchical Bipolar Transistor Modeling with HiCUM will be of great practical
benefit to professionals from the process development, modeling and circuit design …
benefit to professionals from the process development, modeling and circuit design …
A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion
SM Hong, C Jungemann - Journal of computational electronics, 2009 - Springer
The numerical properties of a deterministic Boltzmann equation solver based on a spherical
harmonics expansion of the distribution function are analyzed and improved. A fully coupled …
harmonics expansion of the distribution function are analyzed and improved. A fully coupled …
[PDF][PDF] Основы моделирования элементов микро-и наноэлектроники
ИИ Абрамов - 2016 - libeldoc.bsuir.by
Смысл книги. Одно из самых сложных в настоящее время изделий электронной
промышленности-интегральная схема (ИС). Современная ИС может содержать более …
промышленности-интегральная схема (ИС). Современная ИС может содержать более …
Quantum chemistry treatment of silicon-hydrogen bond rupture by nonequilibrium carriers in semiconductor devices
The interaction of charge carriers with hydrogen-related defects plays a key role in modern
semiconductor applications. Particularly in the field of micro-and nanoelectronics, where …
semiconductor applications. Particularly in the field of micro-and nanoelectronics, where …
[PDF][PDF] Simulation of thermoelectric devices
M Wagner - 2007 - scholar.archive.org
VAILABILITY OF ENERGY is an important cornerstone for wealth and social stability. The
continuous economical growth in the last two centuries went hand in hand with a steady …
continuous economical growth in the last two centuries went hand in hand with a steady …
Transient simulation of semiconductor devices using a deterministic Boltzmann equation solver
In this paper, the transient simulation of semiconductor devices using a deterministic
Boltzmann equation solver is presented. Transient simulation capability is implemented in a …
Boltzmann equation solver is presented. Transient simulation capability is implemented in a …
On the feasibility of spherical harmonics expansions of the Boltzmann transport equation for three-dimensional device geometries
Accurate simulation of carrier transport requires the solution of Boltzmann's transport
equation (BTE), which can be obtained by higher-order spherical harmonics expansion …
equation (BTE), which can be obtained by higher-order spherical harmonics expansion …
A deterministic approach to RF noise in silicon devices based on the Langevin–Boltzmann equation
C Jungemann - IEEE transactions on electron devices, 2007 - ieeexplore.ieee.org
In this paper, a new deterministic approach to electron noise based on a spherical
harmonics expansion (SHE) of the Langevin-Boltzmann equation in the frequency domain is …
harmonics expansion (SHE) of the Langevin-Boltzmann equation in the frequency domain is …
Investigation of transport modeling for plasma waves in THz devices
Z Kargar, T Linn, D Ruić… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
The performance of electronic devices for the detection and generation of THz waves might
be potentially improved by resonances or instabilities due to plasma waves. The analytical …
be potentially improved by resonances or instabilities due to plasma waves. The analytical …