Conductive and semiconductive oxides constitute a class of materials of which the electrical
conductivity and optical transparency can be modulated through material design (eg, doping …

Atomic layer deposition (ALD) is a promising deposition method to precisely control the
thickness and metal composition of oxide semiconductors, making them attractive materials …

Dynamic random-access memory (DRAM) devices are essential volatile memory
components in most digital devices. With the increasing demand for further low-power and …

Gallium oxide thin films, containing either α-Ga2O3 or κ-Ga2O3 crystalline phases, were
grown by atomic layer deposition (ALD) by using GaI3 and O3 as precursors. The κ-Ga2O3 …

In this study, a novel, simple, and robust mist chemical vapor deposition is demonstrated,
compatible with existing industrial practices to deposit gallium oxide thin films and influence …

Atomic layer deposition (ALD) offers a low thermal budget method for producing α-Ga 2 O 3
films on sapphire substrate. In this paper we review the recent progress on plasma …

Перед современным обществом непрерывно возникают все новые и новые
глобальные вызовы, связанные с цифровизацией экономики, развитием систем …