[HTML][HTML] Atomic layer deposition of conductive and semiconductive oxides
B Macco, WMM Kessels - Applied Physics Reviews, 2022 - pubs.aip.org
Conductive and semiconductive oxides constitute a class of materials of which the electrical
conductivity and optical transparency can be modulated through material design (eg, doping …
conductivity and optical transparency can be modulated through material design (eg, doping …
Significance of Pairing In/Ga Precursor Structures on PEALD InGaOx Thin-Film Transistor
TH Hong, HJ Jeong, HM Lee, SH Choi… - … Applied Materials & …, 2021 - ACS Publications
Atomic layer deposition (ALD) is a promising deposition method to precisely control the
thickness and metal composition of oxide semiconductors, making them attractive materials …
thickness and metal composition of oxide semiconductors, making them attractive materials …
Review of Material Properties of Oxide Semiconductor Thin Films Grown by Atomic Layer Deposition for Next-Generation 3D Dynamic Random-Access Memory …
AR Choi, DH Lim, SY Shin, HJ Kang, D Kim… - Chemistry of …, 2024 - ACS Publications
Dynamic random-access memory (DRAM) devices are essential volatile memory
components in most digital devices. With the increasing demand for further low-power and …
components in most digital devices. With the increasing demand for further low-power and …
Atomic Layer Deposition of Ga2O3 from GaI3 and O3: Growth of High-Density Phases
L Aarik, H Mändar, J Kozlova, A Tarre… - Crystal Growth & …, 2023 - ACS Publications
Gallium oxide thin films, containing either α-Ga2O3 or κ-Ga2O3 crystalline phases, were
grown by atomic layer deposition (ALD) by using GaI3 and O3 as precursors. The κ-Ga2O3 …
grown by atomic layer deposition (ALD) by using GaI3 and O3 as precursors. The κ-Ga2O3 …
Investigation on the Mist Intensity to Deposit Gallium Oxide Thin Films by Mist Chemical Vapor Deposition
S Ganguly, K Nama Manjunatha… - physica status solidi …, 2024 - Wiley Online Library
In this study, a novel, simple, and robust mist chemical vapor deposition is demonstrated,
compatible with existing industrial practices to deposit gallium oxide thin films and influence …
compatible with existing industrial practices to deposit gallium oxide thin films and influence …
Progress in atomic layer deposited [alpha]-Ga2O3 materials and solar-blind detectors
Atomic layer deposition (ALD) offers a low thermal budget method for producing α-Ga 2 O 3
films on sapphire substrate. In this paper we review the recent progress on plasma …
films on sapphire substrate. In this paper we review the recent progress on plasma …
[PDF][PDF] Плазмохимический синтез тонких пленок оксида галлия, оксида цинка и халькогенидов систем As (S, Se, Te) и As-Se-Te
ЛА Мочалов - council.muctr.ru
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