Change of chemical bonding properties at SiNx/GaN/AlGaN interface with SiH4 flow rate and its impact on the carrier transport properties of MIS-diodes
P Dalapati, S Arulkumaran, D Mani, H Li, H Xie… - Materials Science and …, 2024 - Elsevier
The understanding of the properties of silicon nitride (SiN x) deposited by plasma-enhanced
chemical vapor deposition (PECVD) is crucial as this layer is widely used for gate dielectric …
chemical vapor deposition (PECVD) is crucial as this layer is widely used for gate dielectric …
Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
In this letter, we demonstrate an integrated process that illustrates the compatibility of
AlN/SiNx passivation with high-performance (ie low leakage and high breakdown) low …
AlN/SiNx passivation with high-performance (ie low leakage and high breakdown) low …
AlGaN/GaN Schottky-gate HEMTs With UV/O₃-treated gate interface
The surface condition under gate of AlGaN/GaN heterostructure plays a critical role in high-
electron mobility transistor (HEMT). In this study, the effects of ultraviolet/ozone (UV/O 3) …
electron mobility transistor (HEMT). In this study, the effects of ultraviolet/ozone (UV/O 3) …
Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
GB Rayner, N O'Toole, J Shallenberger… - Journal of Vacuum …, 2020 - pubs.aip.org
Ultrahigh purity (UHP) reactor conditions provide a process environment for growth of nitride
thin films with low oxygen content by plasma-enhanced atomic layer deposition (PEALD). In …
thin films with low oxygen content by plasma-enhanced atomic layer deposition (PEALD). In …
Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer
An obvious increase in the gate leakage current has been commonly observed in GaN
HEMTs, after Plasma-enhanced chemical vapor deposition (PECVD) SiN passivation has …
HEMTs, after Plasma-enhanced chemical vapor deposition (PECVD) SiN passivation has …
Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires
We study the molecular beam epitaxy of AlN nanowires between 950 C and 1215 C, well
above the usual growth temperatures, to identify optimal growth conditions. The nanowires …
above the usual growth temperatures, to identify optimal growth conditions. The nanowires …
Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation
In this work, a dramatic reduction in current collapse is achieved in GaN-based high-electron-
mobility transistors (HEMTs) using dual-layer SiN x stressor passivation (DSSP), and the …
mobility transistors (HEMTs) using dual-layer SiN x stressor passivation (DSSP), and the …
Effect of interface and bulk traps on the C–V characterization of a LPCVD-SiNx/AlGaN/GaN metal-insulator-semiconductor structure
Silicon nitride (SiN x) film grown by low-pressure chemical vapor deposition (LPCVD) is
utilized as a gate dielectric for AlGaN/GaN metal-insulator-semiconductor high-electron …
utilized as a gate dielectric for AlGaN/GaN metal-insulator-semiconductor high-electron …
Investigation of SiNx and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges
In this work, we studied the mechanisms and switching properties of AlGaN/GaN high-
electron-mobility-transistors (HEMTs) passivated by amorphous-SiN x and monocrystal-like …
electron-mobility-transistors (HEMTs) passivated by amorphous-SiN x and monocrystal-like …
AlN passivation effect on Au/GaN Schottky contacts
Surface passivation effect with an aluminum nitride (AlN) thin film deposited by atomic layer
deposition (ALD) on metal/gallium nitride (GaN) junctions were investigated using current …
deposition (ALD) on metal/gallium nitride (GaN) junctions were investigated using current …