Nanowire electronics: from nanoscale to macroscale
Semiconductor nanowires have attracted extensive interest as one of the best-defined
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …
III-nitride nanostructures: Emerging applications for Micro-LEDs, ultraviolet photonics, quantum optoelectronics, and artificial photosynthesis
In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies
The lighting industry undergoes a revolutionizing transformation with the introduction of III-
nitride semiconductors, and" LEDs" became a household name. The solid-state light source …
nitride semiconductors, and" LEDs" became a household name. The solid-state light source …
InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering
Micro or submicron scale light-emitting diodes (µLEDs) have been extensively studied
recently as the next-generation display technology. It is desired that µLEDs exhibit high …
recently as the next-generation display technology. It is desired that µLEDs exhibit high …
AlGaN nanowires for ultraviolet light-emitting: recent progress, challenges, and prospects
In this paper, we discuss the recent progress made in aluminum gallium nitride (AlGaN)
nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such …
nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such …
Monolayer GaN excitonic deep ultraviolet light emitting diodes
We report on the molecular beam epitaxy and characterization of monolayer GaN
embedded in N-polar AlN nanowire structures. Deep ultraviolet emission from 4.85 to 5.25 …
embedded in N-polar AlN nanowire structures. Deep ultraviolet emission from 4.85 to 5.25 …
III-nitride nanostructures for high efficiency micro-LEDs and ultraviolet optoelectronics
Microscale visible light emitting diodes (LEDs), as well as LEDs and laser diodes operating
in the mid and deep ultraviolet (UV), have emerged as the frontier of semiconductor …
in the mid and deep ultraviolet (UV), have emerged as the frontier of semiconductor …
Bottom‐Up Formation of III‐Nitride Nanowires: Past, Present, and Future for Photonic Devices
The realization of semiconductor heterostructures marks a significant advancement beyond
silicon technology, driving progress in high‐performance optoelectronics and photonics …
silicon technology, driving progress in high‐performance optoelectronics and photonics …
Recent progress of electrically pumped AlGaN diode lasers in the UV-B and-C bands
The development of electrically pumped semiconductor diode lasers emitting at the
ultraviolet (UV)-B and-C spectral bands has been an active area of research over the past …
ultraviolet (UV)-B and-C spectral bands has been an active area of research over the past …
Deep ultraviolet luminescence due to extreme confinement in monolayer GaN/Al (Ga) N nanowire and planar heterostructures
We present experimental results confirming extreme quantum confinement in GaN/Al x Ga1–
x N (x= 0.65 and 1.0) nanowire and planar heterostructures, where the GaN layer thickness …
x N (x= 0.65 and 1.0) nanowire and planar heterostructures, where the GaN layer thickness …