Recent Progresses and Perspectives of UV Laser Annealing Technologies for Advanced CMOS Devices
T Tabata, F Rozé, L Thuries, S Halty, PE Raynal… - Electronics, 2022 - mdpi.com
The state-of-the-art CMOS technology has started to adopt three-dimensional (3D)
integration approaches, enabling continuous chip density increment and performance …
integration approaches, enabling continuous chip density increment and performance …
Microsecond non-melt UV laser annealing for future 3D-stacked CMOS
T Tabata, F Rozé, L Thuries, S Halty… - Applied Physics …, 2022 - iopscience.iop.org
Abstract Three-dimensional (3D) CMOS technology encourages the use of UV laser
annealing (UV-LA) because the shallow absorption of UV light into materials and the …
annealing (UV-LA) because the shallow absorption of UV light into materials and the …
[HTML][HTML] Differential Hall Effect Metrology for Electrical Characterization of Advanced Semiconductor Layers
BM Basol, A Joshi - Metrology, 2024 - mdpi.com
Semiconductor layers employed in fabricating advanced node devices are becoming thinner
and their electrical properties are diverging from those established for highly crystalline …
and their electrical properties are diverging from those established for highly crystalline …
Complementary use of atom probe tomography (APT) and differential hall effect metrology (DHEM) for activation loss in phosphorus-implanted polycrystalline silicon
KL Lin, FY Lee, YM Chen, YJ Tseng, HW Yen - Scripta Materialia, 2024 - Elsevier
The objectives of this study are to explore the activation ratios of implanted phosphorus
dopants in polycrystalline silicon (poly-Si), and to reveal the role of grain boundary …
dopants in polycrystalline silicon (poly-Si), and to reveal the role of grain boundary …
Annealing effects on electrical property depth profiles of BF2 and P implanted polycrystalline Si determined by differential hall effect metrology
Differential Hall effect metrology (DHEM) was used to accurately and effectively evaluate the
carrier concentration, mobility, and resistivity depth profiles at nano-scale resolution for BF2 …
carrier concentration, mobility, and resistivity depth profiles at nano-scale resolution for BF2 …
Nano-scale depth profiles of electrical properties of phosphorus doped silicon for ultra-shallow junction evaluation
HY Chang, YCS Wu, CH Chang, KL Lin… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
Electrical properties and microstructure of phosphorus (P) implanted p-type Si substrates
were evaluated by four-point probe (4PP), Differential Hall Effect Metrology (DHEM) …
were evaluated by four-point probe (4PP), Differential Hall Effect Metrology (DHEM) …
[图书][B] Approaching the Limits of Low Resistance Contacts to N-Type Germanium
P Ramesh - 2021 - search.proquest.com
For over half a century, we have witnessed an incredible increase in the performance of
digital electronics by virtue of Moore's Law. This improvement has largely been powered by …
digital electronics by virtue of Moore's Law. This improvement has largely been powered by …