Two-dimensional gersiloxenes with tunable bandgap for photocatalytic H2 evolution and CO2 photoreduction to CO
The discovery of graphene and graphene-like two-dimensional materials has brought fresh
vitality to the field of photocatalysis. Bandgap engineering has always been an effective way …
vitality to the field of photocatalysis. Bandgap engineering has always been an effective way …
Diamond-germanium composite films grown by microwave plasma CVD
We report on novel microcrystalline diamond-germanium composite films grown by
microwave plasma-assisted chemical vapor deposition in CH 4–H 2-GeH 4 mixtures on Si …
microwave plasma-assisted chemical vapor deposition in CH 4–H 2-GeH 4 mixtures on Si …
Laser-induced Fano asymmetry, electron-phonon coupling, and phase transition in lanthanide sesquioxide (Ln2O3; Ln= Eu, Gd, Dy) nanoparticles: A Raman …
S Bhattacharjee, KK Chattopadhyay - Journal of Applied Physics, 2022 - pubs.aip.org
Laser power-dependent Raman spectroscopy is deployed to probe Fano interference in
asymmetrically broadened T g modes and the associated line shift in three technologically …
asymmetrically broadened T g modes and the associated line shift in three technologically …
Microporous poly-and monocrystalline diamond films produced from chemical vapor deposited diamond–germanium composites
We report on a novel method for porous diamond fabrication, which is based on the
synthesis of diamond–germanium composite films followed by etching of the Ge component …
synthesis of diamond–germanium composite films followed by etching of the Ge component …
Adjustable charge states of nitrogen-vacancy centers in low-nitrogen diamond after electron irradiation and subsequent annealing
R Guo, K Wang, Y Zhang, Z Xiao, G Jia, H Wang… - Applied Physics …, 2020 - pubs.aip.org
In this work, we investigate the photoluminescence spectra of nitrogen-vacancy (NV) centers
in low-nitrogen diamond under 200 keV electron irradiation. We discuss the dependence of …
in low-nitrogen diamond under 200 keV electron irradiation. We discuss the dependence of …
Dewetting behavior of Ge layers on SiO2 under annealing
AA Shklyaev, AV Latyshev - Scientific Reports, 2020 - nature.com
The solid-state dewetting phenomenon in Ge layers on SiO2 is investigated as a function of
layer thickness d Ge (from 10 to 86 nm) and annealing temperature. The dewetting is …
layer thickness d Ge (from 10 to 86 nm) and annealing temperature. The dewetting is …
Broadband antireflection coatings made of resonant submicron-and micron-sized SiGe particles grown on Si substrates
AA Shklyaev, AV Tsarev - IEEE Photonics Journal, 2021 - ieeexplore.ieee.org
The solid-state dewetting phenomenon was used to obtain submicron-and micron-sized
SiGe particle arrays by the Ge deposition on Si (100) substrates. Their transmission and …
SiGe particle arrays by the Ge deposition on Si (100) substrates. Their transmission and …
Coatings consisting of Ge particles on nonwettable Si oxide surfaces and their resonance reflection spectra
AA Shklyaev - Thin Solid Films, 2023 - Elsevier
The dewetting phenomenon that occurs during annealing of Ge films after their deposition
on oxidized Si surfaces at room temperature is studied. The agglomeration of Ge films into …
on oxidized Si surfaces at room temperature is studied. The agglomeration of Ge films into …
Composition-adjustable silicon-germanium alloy films based on porous silicon matrices
Morphology and crystalline structure of silicon-germanium alloys formed by rapid thermal
processing of germanium-filled porous silicon layers are evaluated. Two types of porous …
processing of germanium-filled porous silicon layers are evaluated. Two types of porous …
Photoluminescence study on the optical properties of silicon-vacancy centre in diamond
Y Zhang, K Wang, G Jia, J Li, H Wang, Y Tian - Journal of Alloys and …, 2021 - Elsevier
The optical properties of a silicon-vacancy (Si–V) centre were studied using
photoluminescence (PL), including the temperature (80 K–270 K) and excitation power (2.25 …
photoluminescence (PL), including the temperature (80 K–270 K) and excitation power (2.25 …