Modeling static noise margin for finfet based sram pufs
In this paper, we develop an analytical PUF model based on a compact FinFET transistor
model that calculates the PUF stability (ie PUF static noise margin (PSNM)) for FinFET …
model that calculates the PUF stability (ie PUF static noise margin (PSNM)) for FinFET …
Modified hetero-gate-dielectric TFET for improved analog and digital performance
In this paper, we have investigated the effect of shifting a high-k dielectric pocket of a 5 nm
length over the tunneling and channel regions of a Hetero-Dielectric Tunneling Field Effect …
length over the tunneling and channel regions of a Hetero-Dielectric Tunneling Field Effect …
[图书][B] Reliability of physical unclonable function derived from the power-up state of static random-access memory in extreme environments
HJ Wilson - 2023 - search.proquest.com
Static random-access memory (SRAM) is a high-speed, volatile memory that is ubiquitous in
a wide range of computing platforms. Because of intrinsic process variations, an SRAM …
a wide range of computing platforms. Because of intrinsic process variations, an SRAM …
EMBEDDED INCREASED ENTROPY PHYSICALLY UNCLONABLE FUNCTIONS
JC Harding - 2022 - rave.ohiolink.edu
With the emergence of IoT applications, the threat of hacked devices is becoming more
detrimental with the possibility of compromised networks and leaked passwords. These …
detrimental with the possibility of compromised networks and leaked passwords. These …
Mitigation of the impact of across chip systematic process variation using a novel system level design
N Ghoshal, SRKC Saraswatula… - … on Defect and Fault …, 2021 - ieeexplore.ieee.org
A systematic left to right process variation is observed across a 20 nm technology chip.
Consequently, reference generators and amplifiers which are scattered around the chip …
Consequently, reference generators and amplifiers which are scattered around the chip …
[PDF][PDF] Performance Evaluation of SRAM-PUF based on 7-nm, 10-nm and 14-nm FinFET Technology Nodes.
As complementary metal-oxide semiconductor (CMOS) technology continues to scale down
to ultra-deep submicron (UDSM) technology, the planar metal-oxide semiconductor …
to ultra-deep submicron (UDSM) technology, the planar metal-oxide semiconductor …
[PDF][PDF] Modeling Static Noise Margin for FinFET based SRAM PUFs
SMGSR Maes, GJ Schrijen, S Hamdioui, M Taouil - 2020 - pure.tudelft.nl
In this paper, we develop an analytical PUF model based on a compact FinFET transistor
model that calculates the PUF stability (ie PUF static noise margin (PSNM)) for FinFET …
model that calculates the PUF stability (ie PUF static noise margin (PSNM)) for FinFET …
[引用][C] 터널전계효과트랜지스터로구성된모놀리틱3 차원인버터의적층된소자간전기적상호작용조사
강영선， 안태준， 유윤섭 - 한국정보통신학회종합학술대회논문집, 2020 - dbpia.co.kr
요 약터널 전계효과트랜지스터 (tunneling field-effect transistor; TFET) 로 구성된 모놀리틱 3D
인버터의 적층형 TFET 간의 전기적 상호작용에 의한 인버터 특성을 조사했다. 상/하부 TFET …
인버터의 적층형 TFET 간의 전기적 상호작용에 의한 인버터 특성을 조사했다. 상/하부 TFET …