In this paper, we report the influence of thermal annealing on structural, electrical properties
V 2 O 5 thin films and their application of SBD's. V 2 O 5 thin films were prepared using glass …

In the present work, Nd (x)-V 2 O 5-nanorods (x= 2, 4 and 6 wt%) thin films were prepared
via a spin coating technique. X-ray diffraction analysis shows tetragonal phases for …

A Schottky–pn junction structure diode (SPND) has been fabricated on HPHT Ib (001)
diamond substrate for temperature sensor application. The forward current-voltage …

p-NiO/n-GaN heterostructure diodes with different anode diameters were fabricated and
comprehensively characterized for temperature sensor application. The circular diodes with …

A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary
variation of VF with absolute temperature (CTAT) and differential proportional to absolute …

In this study, the molybdenum trioxide as a chemical compound with the formula MoO 3 was
coated between chromium (Cr) metal and n-type semiconductor (n-Si) by thermal …

We have fabricated Au/n-Si (D1), Au/Cu/n-Si (D2), Au/Cu (4 nm)/n-Si (D3) and Au/Cu (2
nm)/n-Si (D4) Schottky barrier diodes (SBDs). The thickness of the Cu Schottky contact (SC) …

A n-4H SiC based diode is fabricated by an Au front metal contact to provide rectification at
the metal-semiconductor (MS) junction, and a back ohmic contact is also obtained using Au …

For the first time, we report on the performances of 4H-SiC pin-diode temperature sensors
for operating temperatures between 20.5 and 802 K. In this huge temperature range, three …

A new spherical vibrational energy harvesting device with an additional low power
management circuit for optimizing the power transfer from the mechanical vibrations to a …