Terahertz communications and sensing for 6G and beyond: A comprehensive review
Next-generation cellular technologies, commonly referred to as the sixth generation (6G),
are envisioned to support a higher system capacity, better performance, and network …
are envisioned to support a higher system capacity, better performance, and network …
Terahertz waveform synthesis in integrated thin-film lithium niobate platform
A Herter, A Shams-Ansari, FF Settembrini… - Nature …, 2023 - nature.com
Bridging the “terahertz gap “relies upon synthesizing arbitrary waveforms in the terahertz
domain enabling applications that require both narrow band sources for sensing and few …
domain enabling applications that require both narrow band sources for sensing and few …
A 205–273-GHz frequency multiplier chain (× 6) with 9-dBm output power and 1.92% DC-to-RF efficiency in 0.13-µm SiGe BiCMOS
Z Li, J Chen, D Tang, R Zhou… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
This article presents a 205–273-GHz wideband frequency multiplier chain (FMC) in a 0.13-
SiGe BiCMOS technology with/500 GHz. The proposed FMC consists of a-band input …
SiGe BiCMOS technology with/500 GHz. The proposed FMC consists of a-band input …
A 260–300-GHz mixer-first IQ receiver with fundamental LO driver in 130-nm SiGe process
We report a 280-GHz mixer-first quadrature receiver in 130-nm SiGe that achieves a peak
gain of 25 dB, an IF bandwidth of 30-GHz, and a minimum single-sideband (SSB) noise …
gain of 25 dB, an IF bandwidth of 30-GHz, and a minimum single-sideband (SSB) noise …
[HTML][HTML] A Review of Terahertz Solid-State Electronic/Optoelectronic Devices and Communication Systems
W Li, H Zeng, L Huang, S Gong, H Cao… - Chinese Journal of …, 2025 - cje.ejournal.org.cn
With the rapid development of modern communication technology, spectrum resources have
become non-renewable and precious resources, and the terahertz frequency band has …
become non-renewable and precious resources, and the terahertz frequency band has …
A 120-GHz Class-F Frequency Doubler With 7.8-dBm POUT in 55-nm Bulk CMOS
This article analyzes the 2nd-order harmonic power generation with power level boosted by
fundamental and 3rd-order harmonic based on the Krummenacher–Vittoz (EKV) models …
fundamental and 3rd-order harmonic based on the Krummenacher–Vittoz (EKV) models …
A 280 GHz 30 GHz bandwidth cascaded amplifier using flexible interstage matching strategy in 130 nm SiGe technology
This paper presents a 280 GHz amplifier design strategy for a robust multistage amplifier in
a sub-Terahertz (sub-THz) regime in 130 nm SiGe technology. The presented 280 GHz …
a sub-Terahertz (sub-THz) regime in 130 nm SiGe technology. The presented 280 GHz …
A 272 GHz InP HBT Direct-Conversion Transmitter with 14.1 dBm Output Power
We report a fully integrated 272 GHz direct-conversion transmitter in 250nm InP HBT
technology. The transmitter has more than 18dB conversion gain over 264-285GHz …
technology. The transmitter has more than 18dB conversion gain over 264-285GHz …
A 195–244 GHz CMOS self-mixing frequency tripler with> 23 dBc fundamental rejection
Z Lin, Y Shen, Y Ding, J Zou, S Hu - AEU-International Journal of …, 2024 - Elsevier
This paper presents a wideband and high-fundamental rejection self-mixing frequency
tripler in a 40-nm CMOS. The proposed tripler consists of an input half-shielded transformer …
tripler in a 40-nm CMOS. The proposed tripler consists of an input half-shielded transformer …
Research on Silicon‐Based Terahertz Communication Integrated Circuits
P ZHOU, J CHEN, S TANG, J YU… - Chinese Journal of …, 2022 - Wiley Online Library
With the increasing number of users and emerging new applications, the demand for mobile
data traffic is growing rapidly. The limited spectrum resources of the traditional microwave …
data traffic is growing rapidly. The limited spectrum resources of the traditional microwave …