In this report, we propose to enhance the hole injection efficiency by adjusting the barrier
height of the p-type electron blocking layer (p-EBL) for∼ 273 nm deep ultraviolet light …

It is well known that the p-type AlGaN electron blocking layer (p-EBL) can block hole
injection for deep ultraviolet light-emitting diodes (DUV LEDs). The polarization induced …

The roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple
quantum well (MQW) light-emitting diodes are investigated by numerical simulation. The …

In this work, we simply take advantage of the polarization effect to efficiently improve the
hole injection from the p-type electron blocking layer (p-EBL) to the end of the active region …

The drift velocity for holes is strongly influenced by the electric field in the p-type hole
injection layer for III-nitride based deep ultraviolet light-emitting diodes (DUV LEDs). In this …

AlGaN-based deep-ultraviolet light emitting diodes adopting an embedded delta-AlGaN thin
layer with an Al composition higher than that in conventional barriers have been …

In this work, III-nitride based∼ 370 nm UVA light-emitting diodes (LEDs) grown on Si
substrates are demonstrated. We also reveal the impact of the AlN composition in the AlGaN …

In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are
usually adopted to mitigate the quantum confined Stark effect (QCSE), caused due to strong …

The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly
limited by the insufficient hole injection, and this is caused by the inefficient p-type doping …

InGaN/GaN light-emitting diodes (LEDs) grown along the [0001] orientation inherit very
strong polarization induced electric fields. This results in a reduced effective conduction …