Using an AlGaAs-GaAs waveguide structure with a six-stack InAs-InGaAs" dots-in-a-
well"(DWELL) gain region having an aggregate dot density of approximately 8× 10/sup …

Using the effective mass and parabolic band approximations, we determine analytically the
energies of the fundamental and lowest states of a confined electron in paraboloidal …

The structural properties of InAsBi nanoislands grown on semi insulating GaAs by
atmospheric pressure metalorganic vapor phase epitaxy, using trimethyl indium, trimethyl …

We have performed atomic force microscopy to investigate the effect of various indium
compositions and various AsH 3 flow times during cooling on the formation of self …

Self-assembled InAs quantum dots (QDs) are grown on vicinal GaAs (100) substrates by
using metal-organic chemical vapour deposition (MOCVD). An abnormal temperature …

The influence of GaAs (100) 2° substrate misorientation on the formation and optical
properties of InAs quantum dots (QDs) has been studied in compare with dots on exact …

We describe a high angle annular dark field scanning transmission electron microscopy
study of a self-assembled InAs-GaAs quantum dot (QD) laser sample providing insight into …

The effect of a thin In0. 1Ga0. 9As underlying layer on the structural properties of single layer
In0. 5Ga0. 5As quantum dots (QDs) was investigated using atomic force microscopy (AFM) …

Thermal annealing effect on InAs quantum dots grown on vicinal (100) GaAs substrates is
studied in comparison with dots on exact (100) GaAs substrates. We find that annealing acts …

The formation process of InAs quantum dots (QDs) on vicinal GaAs (1 0 0) substrates is
studied by atomic force microscopy (AFM). It is found that after 1.2 MLs of InAs deposition …