Analysis of SRAM metrics for data dependent BTI degradation and process variability

JB Shaik, S Singhal, N Goel - Integration, 2020 - Elsevier
Abstract Bias Temperature Instability (BTI) is one of the most crucial reliability issues in
modern CMOS technology. It leads to shift in device parameters, which eventually affect …

MECCA: A robust low-overhead PUF using embedded memory array

AR Krishna, S Narasimhan, X Wang… - … Hardware and Embedded …, 2011 - Springer
The generation of unique keys by Integrated Circuits (IC) has important applications in areas
such as Intellectual Property (IP) counter-plagiarism and embedded security integration. To …

Impacts of NBTI/PBTI on timing control circuits and degradation tolerant design in nanoscale CMOS SRAM

HI Yang, SC Yang, W Hwang… - IEEE Transactions on …, 2011 - ieeexplore.ieee.org
Negative-bias temperature instability (NBTI) and positive-bias temperature instability (PBTI)
weaken PFET and NFET over the lifetime of usage, leading to performance and reliability …

Integral impact of BTI, PVT variation, and workload on SRAM sense amplifier

I Agbo, M Taouil, D Kraak, S Hamdioui… - … Transactions on Very …, 2017 - ieeexplore.ieee.org
The CMOS technology scaling faced over the past recent decades severe variability and
reliability challenges. One of the major reliability challenges is bias temperature instability …

Aging mitigation in memory arrays using self-controlled bit-flipping technique

A Gebregiorgis, M Ebrahimi, S Kiamehr… - The 20th Asia and …, 2015 - ieeexplore.ieee.org
With CMOS technology downscaling into the nanometer regime, the reliability of SRAM
memories is threatened by accelerated transistor aging mechanisms such as Bias …

Detecting malicious landing pages in malware distribution networks

G Wang, JW Stokes, C Herley… - 2013 43rd Annual IEEE …, 2013 - ieeexplore.ieee.org
Drive-by download attacks attempt to compromise a victim's computer through browser
vulnerabilities. Often they are launched from Malware Distribution Networks (MDNs) …

Long-term continuous assessment of SRAM PUF and source of random numbers

R Wang, G Selimis, R Maes… - … Design, Automation & …, 2020 - ieeexplore.ieee.org
The qualities of Physical Unclonable Functions (PUFs) suffer from several noticeable
degradations due to silicon aging. In this paper, we investigate the long-term effects of …

Effect of NBTI/PBTI aging and process variations on write failures in MOSFET and FinFET flip-flops

U Khalid, A Mastrandrea, M Olivieri - Microelectronics Reliability, 2015 - Elsevier
The assessment of noise margins and the related probability of failure in digital cells has
growingly become essential, as nano-scale MOSFET and FinFET technologies are …

Impact of NBTI aging on the single-event upset of SRAM cells

M Bagatin, S Gerardin, A Paccagnella… - IEEE Transactions on …, 2010 - ieeexplore.ieee.org
We analyzed the impact of negative bias temperature instability (NBTI) on the single-event
upset rate of SRAM cells through experiments and SPICE simulations. We performed critical …

SRAM stability analysis for different cache configurations due to bias temperature instability and hot carrier injection

T Liu, CC Chen, J Wu, L Milor - 2016 IEEE 34th International …, 2016 - ieeexplore.ieee.org
Bias Temperature Instability (BTI) and Hot Carrier Injections (HCI) are two of the main effects
that increase a transistor's threshold voltage and further cause performance degradations …