Abstract Ferromagnetic Co2-Heusler compounds showing high spin polarization have been
utilized as spin injectors and detectors for III–V and Group-IV semiconductors. In this article …

Spin-charge interconversion phenomena are ubiquitous in solid-state physics and represent
a powerful tool to investigate spin transport in metals, semiconductors and …

Employing spins in quantum dots for fault-tolerant quantum computing in large-scale qubit
arrays with on-chip control electronics requires high-fidelity qubit operation at elevated …

Electrical injection of spin-polarized electrons from ferromagnets into semiconductors has
been generally demonstrated through a tunneling process with insulator barrier layers that …

Solid state electronics based on utilizing the electron spin degree of freedom for storing and
processing information can pave the way for next-generation spin-based computing …

We report on the highest two-terminal magnetoresistance (MR) ratio at room temperature in
semiconductor-based lateral spin-valve devices. From first-principles calculations, we …

The emerging semiconductor spintronics has offered a practical routine for developing high-
speed and energy-efficient electronic and optoelectronic devices. GaN holds broad …

We report the highest two-terminal magnetoresistance (MR) ratio at room temperature in
semiconductor (SC)-based vertical spin-valve (VSV) devices on a silicon (Si) platform. Here …

The conversion of spin information into electrical signals is indispensable for spintronic
technologies. Spin-to-charge conversion in ferromagnetic tunnel contacts is well described …

Dimensional and functional scaling 1 1 Functional Scaling: Suppose that a system has been
realized to execute a specific function in a given, currently available, technology. We say that …