The possibility of generating a large range of elastic strain in low-dimensional materials
offers a vast design space that has led to a plethora of scientific and technological …

Developing energy-efficient and scalable microstructural solutions that enable both an
intrinsically high strength and high ductility has always been a pursuit in materials science …

Strained germanium nanowires have recently become an important material of choice for
silicon-compatible optoelectronic devices. While the indirect bandgap nature of germanium …

We report on the behavior of Ge-Ge, Ge-Sn, Sn-Sn like, and disorder-activated (DA)
vibrational modes in GeSn semiconductors investigated using Raman scattering …

Highly tensile-strained Ge quantum dots (TS-Ge-QDs) emitting structures with different size
were successfully grown on InP substrates by molecular beam epitaxy. Dislocation-free TS …

In this paper, we discuss how the deliberate and controlled introduction of strain can be
used to improve the performance of semiconductor lasers. We show how strain-induced …

A recently developed growth technique enables the self-assembly of defect-free quantum
dots on (111) surfaces under large tensile strains. We demonstrate the use of this approach …

We investigated the effect of phase separation on the Schottky barrier height (SBH) of InAlAs
layers grown by metal–organic chemical vapor deposition. The phase separation into the In …

The structural and optical properties of buffer mediated epitaxial germanium (Ge) layer were
investigated and compared with bulk n-type and p-type Ge substrates. An interconnected …

Herein, low‐temperature and temperature‐dependent photoluminescence (PL)
measurements are carried out on highly tensile‐strained Ge nanostructures embedded in …