The detailed science and technology of crystalline oxide film growth using vacuum methods
is reviewed and discussed with an eye toward gaining fundamental insights into the …

SrTiO 3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the
route to the monolithic integration of various complex oxides on the complementary metal …

The fundamental challenge for designing transparent conductors used in photovoltaics,
displays and solid-state lighting is the ideal combination of high optical transparency and …

The development of silicon photonics could greatly benefit from the linear electro-optical
properties, absent in bulk silicon, of ferroelectric oxides, as a novel way to seamlessly …

Multilayer thin‐film dielectric capacitors with high energy‐storage performance and fast
charge/discharge speed have significantly affected the development of miniaturized pulsed …

Ultrafast and highly efficient optical modulators that are based on the Pockels effect are key
components of today's optical communication networks. For the next generation of photonic …

Significant progress has been made in integrating novel materials into silicon photonic
structures in order to extend the functionality of photonic circuits. One of these promising …

Due to the limitations in conventional complementary metal–oxide–semiconductor (CMOS)
scaling technology in recent years, innovation in transistor structures and integration of …

Ferroelectric interfacial devices consist of materials systems whose interfacial electronic
properties (such as a 2D electron gas or an interfacial magnetic spin configuration) are …

This article gives an overview of recent developments in the search for the next-generation
dielectric for the complementary metal-oxide semiconductor gate stack. After introducing the …