Wide bandgap (WBG) devices are a desirable choice for high-density energy conversion
systems. In high-speed hard-switching applications, voltage overshoot across device …

Power modules are the core components of the powertrain of hybrid and battery electric
vehicle (EV) and has a significant impact on system performance and reliability …

Lateral gallium nitride (GaN) high-electron-mobility transistors present better electrical
characteristics compared to silicon or silicon carbide devices such as high switching speed …

SiC mosfet s with antiparallel SiC schottky barrier diodes (SBDs) without reverse recovery
can significantly reduce turn-on switching loss. However, this will exacerbate the oscillation …

Power module packaging technologies are undergoing extensive changes to satisfy
compact high-power-density systems. The advantages of double-sided cooling power …

The double-side cooling (DSC) packaging becomes more and more popular with the great
demands of high power and fast speed, especially for silicon carbide metal oxide …

The GaN HEMT devices have great potential for high-power, high-temperature, and high-
frequency applications. However, it is challenging to package GaN HEMTs power module …

This article proposes a novel power module configuration which replaces a part of the
bottom copper layer of a direct-bonded copper by low-permittivity (low-ϵ) epoxy. The …

Compared with silicon and silicon carbide vertical power devices, the lateral structure of
gallium nitride (GaN) high electron mobility transistors (HEMT) has a very different …

Silicon carbide devices provide higher switching speed and switching frequency than their
silicon counterpart. However, these characteristics generate significant electromagnetic …