Controlling short-channel effects in deep-submicron SOI MOSFETs for improved reliability: a review
A Chaudhry, MJ Kumar - IEEE Transactions on Device and …, 2004 - ieeexplore.ieee.org
This paper examines the performance degradation of a MOS device fabricated on silicon-on-
insulator (SOI) due to the undesirable short-channel effects (SCE) as the channel length is …
insulator (SOI) due to the undesirable short-channel effects (SCE) as the channel length is …
Future CMOS scaling and reliability
C Hu - Proceedings of the IEEE, 1993 - ieeexplore.ieee.org
The goals and constraints of MOSFET scaling are reviewed, and the role of reliability
constraints is highlighted. It is concluded that judicial shrinking of MOSFET device …
constraints is highlighted. It is concluded that judicial shrinking of MOSFET device …
[HTML][HTML] Volume IV. The DUNE far detector single-phase technology
B Abi, R Acciarri, MA Acero, G Adamov… - Journal of …, 2020 - iopscience.iop.org
Volume IV. The DUNE far detector single-phase technology - IOPscience This site uses
cookies. By continuing to use this site you agree to our use of cookies. To find out more, see …
cookies. By continuing to use this site you agree to our use of cookies. To find out more, see …
[图书][B] Silicon-on-insulator technology: materials to VLSI: materials to Vlsi
JP Colinge - 2004 - books.google.com
Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of
SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of …
SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of …
Radiation effects in a post-Moore world
DM Fleetwood - IEEE Transactions on Nuclear Science, 2021 - ieeexplore.ieee.org
An overview is presented of the significant influences of Moore's Law scaling on radiation
effects on microelectronics, focusing on historical trends and future needs. A number of …
effects on microelectronics, focusing on historical trends and future needs. A number of …
[图书][B] Design of high-performance microprocessor circuits
AP Chandrakasan, WJ Bowhill, F Fox - 2000 - dl.acm.org
From the Publisher: This book covers the design of next generation microprocessors in deep
submicron CMOS technologies. The chapters in Design of High Performance …
submicron CMOS technologies. The chapters in Design of High Performance …
[图书][B] MOSFET models for VLSI circuit simulation: theory and practice
ND Arora - 2012 - books.google.com
Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated
circuits (IC). Very Large Scale Integrated (VLSI) circuits using MOS technology have …
circuits (IC). Very Large Scale Integrated (VLSI) circuits using MOS technology have …
Short-channel effects in SOI MOSFETs
S Veeraraghavan, JG Fossum - IEEE Transactions on Electron …, 1989 - ieeexplore.ieee.org
Short-channel effects in thin-film silicon-on-insulator (SOI) MOSFETs are shown to be
unique because of dependences on film thickness and body and back-gate (substrate) …
unique because of dependences on film thickness and body and back-gate (substrate) …
Compact modeling and simulation of circuit reliability for 65-nm CMOS technology
W Wang, V Reddy, AT Krishnan… - … on Device and …, 2007 - ieeexplore.ieee.org
Negative bias temperature instability (NBTI) and channel hot carrier (CHC) are the leading
reliability concerns for nanoscale transistors. The de facto modeling method to analyze CHC …
reliability concerns for nanoscale transistors. The de facto modeling method to analyze CHC …