A comprehensive review on emerging artificial neuromorphic devices
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
[HTML][HTML] Spintronics based random access memory: a review
This article reviews spintronics based memories, in particular, magnetic random access
memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale …
memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale …
Spin Effect to Promote Reaction Kinetics and Overall Performance of Lithium‐Sulfur Batteries under External Magnetic Field
Lithium‐sulfur batteries (LSBs) are still limited by the shuttle of lithium polysulfides (LiPS)
and the slow Li− S reaction. Herein, we demonstrate that when using cobalt sulfide as a …
and the slow Li− S reaction. Herein, we demonstrate that when using cobalt sulfide as a …
Spintronic devices: a promising alternative to CMOS devices
The field of spintronics has attracted tremendous attention recently owing to its ability to offer
a solution for the present-day problem of increased power dissipation in electronic circuits …
a solution for the present-day problem of increased power dissipation in electronic circuits …
High tunnelling electroresistance in a ferroelectric van der Waals heterojunction via giant barrier height modulation
Ferroelectric tunnel junctions use a thin ferroelectric layer as a tunnelling barrier, the height
of which can be modified by switching its ferroelectric polarization. The junctions can offer …
of which can be modified by switching its ferroelectric polarization. The junctions can offer …
Emerging memory devices for neuromorphic computing
A neuromorphic computing system may be able to learn and perform a task on its own by
interacting with its surroundings. Combining such a chip with complementary metal–oxide …
interacting with its surroundings. Combining such a chip with complementary metal–oxide …
Flexoelectronics of centrosymmetric semiconductors
Interface engineering by local polarization using piezoelectric,,–, pyroelectric, and
ferroelectric,–effects has attracted considerable attention as a promising approach for …
ferroelectric,–effects has attracted considerable attention as a promising approach for …
Ferroelectric tunnel junctions: modulations on the potential barrier
Z Wen, D Wu - Advanced materials, 2020 - Wiley Online Library
Recently, ferroelectric tunnel junctions (FTJs) have attracted considerable attention for
potential applications in next‐generation memories, owing to attractive advantages such as …
potential applications in next‐generation memories, owing to attractive advantages such as …
Control of magnetism by electric fields
F Matsukura, Y Tokura, H Ohno - Nature nanotechnology, 2015 - nature.com
The electrical manipulation of magnetism and magnetic properties has been achieved
across a number of different material systems. For example, applying an electric field to a …
across a number of different material systems. For example, applying an electric field to a …
Recent progress in voltage control of magnetism: Materials, mechanisms, and performance
Voltage control of magnetism (VCM) is attracting increasing interest and exciting significant
research activity driven by its profound physics and enormous potential for application. This …
research activity driven by its profound physics and enormous potential for application. This …