Atomic layer deposition of metal oxides and chalcogenides for high performance transistors

C Shen, Z Yin, F Collins, N Pinna - Advanced Science, 2022 - Wiley Online Library
Atomic layer deposition (ALD) is a deposition technique well‐suited to produce high‐quality
thin film materials at the nanoscale for applications in transistors. This review …

Molybdenum disulfide/reduced graphene oxide: Progress in synthesis and electro-catalytic properties for electrochemical sensing and dye sensitized solar cells

K Ahmad, MA Shinde, H Kim - Microchemical Journal, 2021 - Elsevier
In the last decades, it has been seen that the evolution of nanomaterials have played
important role in tuning the structure and shape of the materials to develop the desired …

Atomic layer deposition of 2D metal dichalcogenides for electronics, catalysis, energy storage, and beyond

M Mattinen, M Leskelä, M Ritala - Advanced Materials …, 2021 - Wiley Online Library
Abstract 2D transition metal dichalcogenides (TMDCs) are among the most exciting
materials of today. Their layered crystal structures result in unique and useful electronic …

Nucleation and Growth of Monolayer MoS2 at Multisteps of MoO2 Crystals by Sulfurization

Y Jung, H Ryu, H Kim, D Moon, J Joo, SC Hong… - ACS …, 2023 - ACS Publications
Two-dimensional (2D) materials and their heterostructures are promising for next-generation
optoelectronics, spintronics, valleytronics, and electronics. Despite recent progress in …

[HTML][HTML] Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN

F Giannazzo, SE Panasci, E Schilirò, G Greco… - Applied Surface …, 2023 - Elsevier
The integration of two-dimensional MoS 2 with GaN recently attracted significant interest for
future electronic/optoelectronic applications. However, the reported studies have been …

Systematic review of molybdenum disulfide for solar cell applications: Properties, mechanism and application

AD Al-Ghiffari, NA Ludin, ML Davies, RM Yunus… - Materials Today …, 2022 - Elsevier
Molybdenum disulfide (MoS 2) has received much interest due to its revolutionary
development and advantageous properties; particularly in its configurable bandgap that can …

Thickness-Dependent Structural and Electrical Properties of WS2 Nanosheets Obtained via the ALD-Grown WO3 Sulfurization Technique as a Channel Material for …

RI Romanov, MG Kozodaev, AG Chernikova… - ACS …, 2021 - ACS Publications
Ultrathin WS2 films are promising functional materials for electronic and optoelectronic
devices. Therefore, their synthesis over a large area, allowing control over their thickness …

A facile strategy for the growth of high-quality tungsten disulfide crystals mediated by oxygen-deficient oxide precursors

DI Miakota, RR Unocic, F Bertoldo, G Ghimire… - Nanoscale, 2022 - pubs.rsc.org
Chemical vapor deposition (CVD) has been established as a versatile route for the large-
scale synthesis of transition metal dichalcogenides, such as tungsten disulfide (WS2). Yet …

[HTML][HTML] A novel two-step route to unidirectional growth of multilayer MoS2 nanoribbons

DI Miakota, G Ghimire, RK Ulaganathan… - Applied Surface …, 2023 - Elsevier
Alkali-assisted chemical vapour deposition (CVD) of transition metal dichalcogenides
(TMDs) has been shown to promote the growth of large single crystals of TMD monolayers …

Precise Layer Control and Electronic State Modulation of a Transition Metal Dichalcogenide via Phase‐Transition‐Induced Growth

A Sohn, C Kim, JH Jung, JH Kim, KE Byun… - Advanced …, 2022 - Wiley Online Library
Wafer‐scale growth of transition metal dichalcogenides with precise control over the number
of layers, and hence the electronic state is an essential technology for expanding the …