Tunnel-FET (TFET) is a major candidate for beyond-CMOS technologies. In this paper, the
properties of the TFETs that affect analog circuit design are studied. To demonstrate how …

Guided by the Wentzel-Kramers–Brillouin approximation for band-to-band tunneling (BTBT),
various performance boosters for Si TFETs are presented and experimentally verified. Along …

This paper presents the low-frequency noise (LFN) behavior of vertical tunnel FETs (TFETs).
The experimental input characteristics with different source compositions (Si and Ge) and …

We report a temperature independent subthreshold slope (SS) of∼ 47 mV/dec at low
temperature in a triple top gate graphene tunnel field-effect transistor (TFET). The outer …

In this article, we report an investigation of the effects of variation in temperature in the range
of 300-450 K on the analog performance and harmonic distortion (HD) characteristics of a …

In this work the Line-TFET performance is compared with MOSFET and Point-TFET devices,
with different architectures (FinFET and GAA: Gate-All-Around) at both room and high …

All electronic devices when used in a radiation environment undergo significant changes in
their electrical properties. It is interesting to explore the effects of radiation, not only on …

The goal of this paper is to study the analog performance parameters of tunnel field-effect
transistors (TFETs) with different source compositions and process conditions. The …

This paper explores the temperature sensitivity of Inner-gate engineered junctionless silicon
nanotube FET (JL-SiNT-FET) on analog/RF performance. It is found that the reduction in the …

By understanding the potential benefits of Gate Stack Dual Material double gate MOSFET
(DG MOSFET), this research aims to contribute to the investigation of its electrical …