Tuning of electronic and optical properties of a predicted silicon allotrope: Hexagonal silicon -Si
The indirect band gap of the diamondlike silicon does not allow direct travel of electrons
between valence band and conduction band edges, which has limited its application and …
between valence band and conduction band edges, which has limited its application and …
Carrier-induced formation of electrically active boron-interstitial clusters in irradiated boron-doped silicon
XC Chen, L Li, MY Wang, H Ren, XQ Liu… - Journal of Applied …, 2024 - pubs.aip.org
Excess minority carriers create boron-related recombination centers that degrade the
efficiency of the non-particle-irradiated silicon solar cells. However, the carrier-induced …
efficiency of the non-particle-irradiated silicon solar cells. However, the carrier-induced …