In this study, the degradation characteristics of radio frequency (RF)-low-noise amplifiers
(LNA) due to a total ionizing dose (TID) is investigated. As a device-under-test (DUT) …

In the framework of the NewSpace revolution, time-to–market and budget constraints drive
the development of small and medium-sized satellites in Low Earth Orbit (LEO) orbit. The …

The individual and mixed radiation experiments of gamma rays and neutrons were
performed to evaluate the irradiation synergistic effects (ISEs) of ionizing dose and …

This study investigates the effects of Co-60 gamma-ray irradiation on the DC and RF
characteristics of the SiGe HBTs, with a total dose of up to 4000 krad (Si). The degradation of …

The degradation characteristics of silicon-germanium heterojunction bipolar transistors
(SiGe HBTs) under different bias modes (forward, cutoff and saturation) during irradiation …

The gamma irradiation effect in indium phosphide (InP) heterojunction bipolar transistors
(HBTs) is studied in this paper. The direct-current (DC) and alternating-current (AC) …

The single event effect (SEE) sensitivity of silicon–germanium heterojunction bipolar
transistor (SiGe HBT) irradiated by 100-MeV proton is investigated. The simulation results …

The 3áMeV proton irradiation effects on SiGe low noise amplifier (LNA)(NXP BGU7005)
performance under different voltage supply VCC (0áV, 2.5 áV) conditions were firstly …

N-channel depletion MOSFETs were irradiated with 80 MeV Carbon (C 6+) and 80 MeV
Nitrogen (N 6+) ions in the dose range from 100 krad (Si) to 30 Mrad (Si). The electrical …

Defects originate in N-channel MOSFETs by exposing them to high-energy ions and 60Co
gamma radiation separately to different radiation doses. The electrical variations in …