Analyzing magnetic susceptibility of impurity doped quantum dots in presence of noise

A Bera, A Ghosh, M Ghosh - Journal of Magnetism and Magnetic Materials, 2019 - Elsevier
Present investigation deals with the exploration of magnetic susceptibility (χ) of doped GaAs
quantum dot (QD) in a noisy ambience and following the variations of a few important …

Influence of spatial extension of impurity on the nonlinear optical properties of doped GaAs quantum dot in presence of noise

B Bhakti, S Datta, M Ghosh - Modern Physics Letters B, 2024 - World Scientific
This work examines the role of spatial impurity extension (SIE) on a few nonlinear optical
(NLO) properties of impurity-doped GaAs quantum dot (QD). The NLO properties considered …

Insights into the microscopic and degradation processes in hybrid perovskite solar cells using noise spectroscopy

A Singh, PK Nayak, S Banerjee, Z Wang… - Solar …, 2018 - Wiley Online Library
We report a clear correlation of the features observed in photocurrent noise‐fluctuations to
the performance parameters of hybrid perovskite solar cells. The general trend of increasing …

[HTML][HTML] Noise-based analysis of the reliability of silicon solar cells

X Jia, L He - AIP Advances, 2021 - pubs.aip.org
With silicon solar cells as the research object, this paper takes their nondestructive character
and analyzes their quality with noise-based technology. Through the stress aging of …

Influence of Gaussian white noise on the frequency-dependent linear polarizability of doped quantum dot

J Ganguly, M Ghosh - Chemical Physics, 2014 - Elsevier
We investigate the profiles of diagonal components of frequency-dependent linear (α xx and
α yy) optical response of repulsive impurity doped quantum dots. The dopant impurity …

Influence of Gaussian white noise on the frequency-dependent first nonlinear polarizability of doped quantum dot

J Ganguly, M Ghosh - Journal of Applied Physics, 2014 - pubs.aip.org
We investigate the profiles of diagonal components of frequency-dependent first nonlinear
(⁠ β xxx and β yyy⁠) optical response of repulsive impurity doped quantum dots. We have …

[HTML][HTML] Modulation of Tsallis entropy and corresponding thermodynamic properties of impurity doped GaAs quantum dot in presence of noise

B Bhakti, S Datta, M Ghosh - Next Nanotechnology, 2024 - Elsevier
Present inspection minutely explores the features of Tsallis entropy and the corresponding
internal energy and heat capacity of GaAs quantum dot (QD) incorporating Gaussian …

Low-frequency noise in non-homogeneously doped semiconductor

HV Asriyan, FV Gasparyan, VM Aroutiounian… - Sensors and Actuators A …, 2004 - Elsevier
The possibility of usage of theoretically predicted additional 1/f noise component,
conditioned by presence of the built-in electric field, for the reliability estimation of …

Semiconductor-metal interface influence on the bulk low-frequency noise behavior and role of the phonons refraction points

HV Asriyan, AA Shatveryan… - … and Information in …, 2005 - spiedigitallibrary.org
The influence of the surface and interfaces of semiconductor-metal Al/n+ Si-nSi/Al and Ag/n+
Si-nSi/Ag structures with different aluminum and silver contact coating layers on the level …

Exploring static and frequency—Dependent third nonlinear polarizability of doped quantum dots driven by Gaussian white noise

J Ganguly, M Ghosh - physica status solidi (b), 2015 - Wiley Online Library
We investigate the profiles of diagonal components of static and frequency‐dependent third
nonlinear (,) polarizability of repulsive impurity doped quantum dots driven by noise. The …