The electrical characteristics of Sn/methyl-red/p-type Si/Al contacts
ME Aydın, A Türüt - Microelectronic Engineering, 2007 - Elsevier
The junction characteristics of the organic compound methyl-red film (2-[4-(dimethylamino)
phenylazo] benzoic acid) on a p-type Si substrate have been studied. The current–voltage …
phenylazo] benzoic acid) on a p-type Si substrate have been studied. The current–voltage …
Electrical properties of the n-ZnO/c-Si heterojunction prepared by chemical spray pyrolysis
R Romero, MC López, D Leinen, F Martın… - Materials Science and …, 2004 - Elsevier
Electrical, structural and compositional properties of n-ZnO/c-Si heterojunctions prepared by
chemical spray pyrolysis on single-crystal n-type and p-type monocrystalline silicon (100) …
chemical spray pyrolysis on single-crystal n-type and p-type monocrystalline silicon (100) …
On the energy distribution of interface states and their relaxation time and capture cross section profiles in Al/SiO2/p-Si (MIS) Schottky diodes
The energy distribution profile of the interface states (Nss) and their relaxation time (τ) and
capture cross section (σp) of metal–insulator–semiconductor (Al/SiO2/p-Si) Schottky diodes …
capture cross section (σp) of metal–insulator–semiconductor (Al/SiO2/p-Si) Schottky diodes …
The conductance and capacitance–frequency characteristics of Au/pyronine-B/p-type Si/Al contacts
M Çakar, N Yıldırım, H Doğan, A Türüt - Applied surface science, 2007 - Elsevier
The rectifying junction characteristics of the organic compound pyronine-B (PYR-B) film on a
p-type Si substrate have been studied. The PYR-B has been evaporated onto the top of p-Si …
p-type Si substrate have been studied. The PYR-B has been evaporated onto the top of p-Si …
Electrical properties of thin films on Si deposited by magnetron sputtering at low temperature
Z Wang, V Kugler, U Helmersson, N Konofaos… - Applied Physics …, 2001 - pubs.aip.org
Deposition of SrTiO 3 (STO) thin films by radio-frequency magnetron sputtering in an
ultrahigh vacuum system at a low substrate temperature (∼ 200° C) was performed in order …
ultrahigh vacuum system at a low substrate temperature (∼ 200° C) was performed in order …
Capacitance/Conductance–Voltage–Frequency Characteristics of Structures in Wide Frequency Range
The energy dependence of the interface states (N_\rmss) and relaxation time (τ) and capture
cross section (\rmp) of N_\rmss in (\rmAu/\rmPVC+\rmTCNQ/\rmp-\rmSi) heterojunction were …
cross section (\rmp) of N_\rmss in (\rmAu/\rmPVC+\rmTCNQ/\rmp-\rmSi) heterojunction were …
The energy density distribution profile of interface traps and their relaxation times and capture cross sections of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors …
Abstract Au/graphene oxide (GO)-doped PrBaCoO nanoceramic/n-Si capacitors were
fabricated and their admittance measurements were carried out between 1 kHz and 1 MHz …
fabricated and their admittance measurements were carried out between 1 kHz and 1 MHz …
The conductance and capacitance–frequency characteristics of the organic compound (pyronine-B)/p-Si structures
M Çakar, A Türüt - Synthetic metals, 2003 - Elsevier
The nonpolymeric organic compound pyronine-B thin film on a p-type Si substrate has been
formed by the process of adding a solution of pyronine-B in methanol and evaporating the …
formed by the process of adding a solution of pyronine-B in methanol and evaporating the …
The density of interface states and their relaxation times in Au/Bi4Ti3O12/SiO2/n‐Si(MFIS) structures
MM Bülbül, Ş Altındal, F Parlaktürk… - Surface and interface …, 2011 - Wiley Online Library
Bismuth titanate (Bi4Ti3O12)(BTO) thin films were fabricated on an n‐type Si substrate and
annealed by rapid thermal annealing methods. The I‐V measurement shows that the device …
annealed by rapid thermal annealing methods. The I‐V measurement shows that the device …
Energy density distribution profiles of surface states, relaxation time and capture cross-section in Au/n-type 4H-SiC SBDs by using admittance spectroscopy method
Au/n-type 4H-SiC diodes were fabricated and their electrical characteristics have been
investigated by using the capacitance/conductance-voltage-frequency (C–V–f and G/w–V–f) …
investigated by using the capacitance/conductance-voltage-frequency (C–V–f and G/w–V–f) …