The high-voltage CMOS (HVCMOS) sensors are a novel type of CMOS active pixel sensors
for ionizing particles that can be implemented in CMOS processes with deep n-well option …

New sensor technologies are under development to cope with the ever increasing
requirements for high energy physics (HEP) detectors. For the High-Luminosity LHC (HL …

This study focuses on the properties of the B i O i (interstitial Boron–interstitial Oxygen) and
C i O i (interstitial Carbon–interstitial Oxygen) defect complexes by 5.5 MeV electrons in low …

In this work, the thermally stimulated current (TSC) technique has been used to investigate
the properties of the radiation-induced interstitial boron and interstitial oxygen defect …

High Voltage Monolithic Active Pixel Sensors (HV-MAPS) are based on a commercial High
Voltage CMOS process and collect charge by drift inside a reversely biased diode. HV …

The acceptor removal process is the most detrimental effect encountered in irradiated boron-
doped silicon. This process is caused by a radiation-induced boron-containing donor (BCD) …

The improved radiation hardness of p-type Si detectors is hindered by the radiation-induced
acceptor removal process, which is not fully understood yet. Through atomistic modeling of …

In this work we investigated a method to determine time walk in an active silicon pixel sensor
prototype using Edge-TCT with infrared laser charge injection. Samples were investigated …

Abstract CMOS Monolithic Active Pixel Sensors (CPS) are ultra-light and highly granular
silicon pixel detectors suited for highly sensitive charged particle tracking. Being …

Depleted CMOS sensors are groundbreaking position sensitive detectors that offer a
competitive and cost-effective solution for a large range of particle tracking applications. In …