Abstract A three-dimensional (3D) electro-thermal analytical model to accurately predict the
temperature distribution in multi-finger silicon carbide (SiC) based high-power field-effect …

Self-heating of high-voltage (6kV class) 4H-SiC rectifier p+–n–n+ diodes under the action of
a single 20μs forward current surge pulse has been studied experimentally up to current …

A hydrodynamic model describing the electron transport in silicon carbide semiconductors,
coupled with the heating of the crystal lattice, is presented. It has been obtained by taking …

DC and small-signal electro-thermal simulations of a 4H-SiC microwave power MESFET on
a high purity semi-insulating substrate are compared to measurements. The focus is on the …

Self-heating and loss of thermal stability under the action of a single 8 ms current surge
pulse has been studied experimentally in high-voltage (6 kV class) 4H-SiC p+–n–n+ rectifier …

Numerical simulation results (with emphasis on channel temperature) for a single gate
AlGaN/GaN High Electron Mobility Transistor (HEMT) with either a sapphire or SiC substrate …

It is shown that, at high current densities corresponding to current surges, the isothermal
current–voltage characteristics of high-voltage silicon carbide diodes cannot, in principle, be …

Self-heating of high-voltage (10kV class) 4H-SiC rectifier p+–n–n+ diodes has been studied
experimentally and theoretically in the dc mode. An analytical model is suggested, which …

Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave
field-effect transistors as well as in high-speed power-switching diodes is today an important …

Проведён расчёт распределения температуры по поверхности кристаллов GaN СВЧ
транзисторов для гетероструктур AlGaN/GaN/SiC. Приведены данные по зависимости …