Strained-layer quantum well materials grown by MOCVD for diode laser application
Strained-layer quantum wells have revolutionized the performance of near-infrared diode
lasers. Two primary factors leading to the prevalence of such materials are; 1) the ability for …
lasers. Two primary factors leading to the prevalence of such materials are; 1) the ability for …
Growth far from equilibrium: Examples from III-V semiconductors
TF Kuech, SE Babcock, L Mawst - Applied Physics Reviews, 2016 - pubs.aip.org
The development of new applications has driven the field of materials design and synthesis
to investigate materials that are not thermodynamically stable phases. Materials which are …
to investigate materials that are not thermodynamically stable phases. Materials which are …
Metastable cubic zinc-blende III/V semiconductors: growth and structural characteristics
III/V semiconductors with cubic zinc-blende crystal structure, for example GaAs, GaP or InP,
become metastable if atoms with significantly smaller or larger covalent radius than the …
become metastable if atoms with significantly smaller or larger covalent radius than the …
MOVPE growth and characterization of GaAs/GaAsBi/GaAs pin structure
In this work, we report on the epitaxial growth and characterization of the
GaAs/GaAsBi/GaAs pin structure. The samples were grown on a GaAs (001) substrate using …
GaAs/GaAsBi/GaAs pin structure. The samples were grown on a GaAs (001) substrate using …
Performance optimization of AlGaAs/GaAsBiN resonant tunneling diode
The GaAsBiN denoted highly mismatched alloy is among the new material that has drawn
attention regarding its special physical properties. The co-alloying of GaAs by simultaneous …
attention regarding its special physical properties. The co-alloying of GaAs by simultaneous …
Atomic-Resolution EDX, HAADF, and EELS Study of GaAs1-xBix Alloys
T Paulauskas, V Pačebutas, R Butkutė… - Nanoscale Research …, 2020 - Springer
The distribution of alloyed atoms in semiconductors often deviates from a random
distribution which can have significant effects on the properties of the materials. In this study …
distribution which can have significant effects on the properties of the materials. In this study …
Synthesis and crystal structures of novel tertiary butyl substituted (pseudo-) halogen bismuthanes
Herein we present the synthesis and characterization of di-tertiary butyl substituted (pseudo-
) halogen bismuthanes tBu2BiX (X= Cl (1), Br (2), I (3), CN (4), N3 (5), SCN (6)). These …
) halogen bismuthanes tBu2BiX (X= Cl (1), Br (2), I (3), CN (4), N3 (5), SCN (6)). These …
Local Bi ordering in MOVPE grown Ga (As, Bi) investigated by high resolution scanning transmission electron microscopy
The distribution of Bi atoms in Ga (As, Bi) samples on an atomic scale is investigated using
aberration corrected high angle annular dark field imaging. With the help of statistical …
aberration corrected high angle annular dark field imaging. With the help of statistical …
GaAs1− y− zPyBiz, an alternative reduced band gap alloy system lattice-matched to GaAs
The growth and properties of alloys in the alternative quaternary alloy system GaAs 1− y− z
P y Bi z were explored. This materials system allows simultaneous and independent tuning …
P y Bi z were explored. This materials system allows simultaneous and independent tuning …
[HTML][HTML] Characteristics of OMVPE grown GaAsBi QW lasers and impact of post-growth thermal annealing
Laser diodes employing a strain-compensated GaAs 1− x Bi x/GaAs 1− y P y single quantum
well (SQW) active region were grown by organometallic vapor phase epitaxy (OMVPE). High …
well (SQW) active region were grown by organometallic vapor phase epitaxy (OMVPE). High …