In this article, FinFET, vertically stacked gate-all-around (GAA) nanowire (NW), and
nanosheet (NS) FETs performance are estimated with equal effective channel widths () at …

In this paper, for the first time, we have investigated the DC, analog/RF, and linearity metrics
of asymmetric spacer junctionless (JL) Gate-All-Around (GAA) vertically stacked nanowire …

Self-heating-induced thermal degradation is a severe issue in nonplanar MOS architectures.
Especially in stacked gate-all-around (GAA) nanosheet FET (NSFET), the self-heating effect …

In this paper, we present a fast and expandable artificial neural network (ANN)-based
compact model and parameter extraction flow to replace the existing complicated compact …

In this paper, a vertically stacked nanosheet gate-all-around field-effect transistor (GAA-
NSFET) as a label-free biosensor has been proposed and investigated. The influences of …

In this paper, we present an artificial neural network (ANN)-based compact model to
evaluate the characteristics of a nanosheet field-effect transistor (NSFET), which has been …

Nano-sheet transistor can be defined as a stacked horizontally gate surrounding the
channel on all direction. This new structure is earning extremely attention from research to …

This manuscript for the first time provides insights on the impact of different spacer materials
for the vertically stacked Junctionless Nanosheet Field Effect Transistor (JL-NSFET). The …

In this paper, we present a graded channel gate-all-around silicon nanowire-FET biosensor
working on dielectric modulation through a cavity carved at the center of the gate for label …

Over the last few decades, field-effect transistor (FET)-based biosensors have demonstrated
great potential across various industries, including medical, food, agriculture, environmental …