A comprehensive review on FinFET in terms of its device structure and performance matrices
The revolutions made in the CMOS technology are brought up by, continuous downscaling
in order to obtain higher density, better performance and low power consumption, causing …
in order to obtain higher density, better performance and low power consumption, causing …
A Perspective View of Silicon Based Classical to Non-Classical MOS Transistors and their Extension in Machine Learning
Unprecedented growth in CMOS technology and demand of high-density integrated circuits
(ICs) in semiconductor industry has motivated to research community towards the …
(ICs) in semiconductor industry has motivated to research community towards the …
Design optimization of three-stacked nanosheet FET from self-heating effects perspective
Self-heating effect (SHE) is a severe issue arising in the nanoscale field-effect transistors
(FETs). It raises the device's lattice temperature several degrees higher than the ambient …
(FETs). It raises the device's lattice temperature several degrees higher than the ambient …
Impact of scaling on nanosheet FET and CMOS circuit applications
NA Kumari, VB Sreenivasulu… - ECS Journal of Solid State …, 2023 - iopscience.iop.org
In this paper, the impact of scaling on the gate all around the nanosheet field effect transistor
(GAA NSFET) is assessed in detail at sub-5-nm nodes for digital and analog/RF …
(GAA NSFET) is assessed in detail at sub-5-nm nodes for digital and analog/RF …
Trap and self-heating effect based reliability analysis to reveal early aging effect in nanosheet FET
The reliability of the CMOS devices is severely affected due to the presence of interface (S
i/S i O 2) trap charges and self-heating effect (SHE). In this paper, we investigated the trap …
i/S i O 2) trap charges and self-heating effect (SHE). In this paper, we investigated the trap …
RF with linearity and non-linearity parameter analysis of gate all around negative capacitance junction less FET (GAA-NC-JLFET) for different ferroelectric thickness
Abstract A novel Gate All Around Negative Capacitance Junction less FET (GAA-NC-JLFET)
is proposed in this work, where different RF/Analog, Linear, and Non-linear parameters were …
is proposed in this work, where different RF/Analog, Linear, and Non-linear parameters were …
Role of temperature on linearity and analog/RF performance merits of a negative capacitance FinFET
Temperature plays a decisive role in semiconductor device performance and reliability
analysis. The effect is more severe in a negative capacitance (NC) transistor, as the …
analysis. The effect is more severe in a negative capacitance (NC) transistor, as the …
Reliability of TCAD study for HfO2-doped Negative capacitance FinFET with different Material-Specific dopants
Attaining the ferroelectric (FE) polarization in a thin HfO 2 layer using a specific dopant is a
widely adopted way to realize Negative Capacitance (NC) FET. In a general TCAD …
widely adopted way to realize Negative Capacitance (NC) FET. In a general TCAD …
Investigation of self-heating effect in tree-FETs by interbridging stacked nanosheets: a reliability perspective
S Srivastava, M Shashidhara… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
This work comprehensively investigates the self-heating effects (SHEs) in Tree-FET at 5nm
technological nodes. A comparative analysis of Tree-FET with Nanosheet FET (NSFET) …
technological nodes. A comparative analysis of Tree-FET with Nanosheet FET (NSFET) …
Performance optimization of tri-gate junctionless FinFET using channel stack engineering for digital and analog/RF design
This manuscript explores the behavior of a junctionless tri-gate FinFET at the nano-scale
region using SiGe material for the channel. For the analysis, three different channel …
region using SiGe material for the channel. For the analysis, three different channel …