Electrical characterization of GaP-silicon interface for memory and transistor applications

A Pal, A Nainani, Z Ye, X Bao… - IEEE transactions on …, 2013 - ieeexplore.ieee.org
Process conditions of gallium phosphide (GaP) metal–organic chemical vapor deposition
growth on silicon (Si) are optimized by material characterization. Thorough investigation of …