Short Channel Output Conductance Enhancement Through Forward Body Biasing to Realize a 0.5 V 250$\upmu\text {W} $0.6–4.2 GHz Current-Reuse CMOS LNA

M Parvizi, K Allidina… - IEEE Journal of Solid-State …, 2015 - ieeexplore.ieee.org
This work examines the use of a forward body biasing (FBB) scheme to mitigate output
conductance degradation due to short channel effects in ultra-low voltage (ULV) circuits with …

A low-power reconfigurable narrowband/wideband LNA for cognitive radio-wireless sensor network

ARA Kumar, A Dutta, BD Sahoo - IEEE Transactions on Very …, 2019 - ieeexplore.ieee.org
This article proposes a low-power reconfigurable multimode low-noise amplifier (LNA) that
can be configured for multiple narrowband as well as wideband operations while providing …

Novel design charts for optimum source degeneration tradeoff in conjugately matched multistage low-noise amplifiers

PE Longhi, L Pace, S Colangeli… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
Source degenerative feedback is extensively applied in the low-noise amplifier design. The
beneficial effects of this technique are well established in the open literature. However, the …

Artificial neural network modeling of a CMOS differential low-noise amplifier using the Bayesian regularization algorithm

B Subburaman, V Thangaraj, V Balu, UM Pandyan… - Sensors, 2023 - mdpi.com
The purpose of this communication is to present the modeling of an Artificial Neural Network
(ANN) for a differential Complementary Metal Oxide Semiconductor (CMOS) Low-Noise …

A 0.6-V Low-Power Variable-Gain LNA in 0.18- m CMOS Technology

JY Hsieh, KY Lin - IEEE Transactions on Circuits and Systems II …, 2019 - ieeexplore.ieee.org
A 0.6-V low-power variable-gain low-noise amplifier by using 0.18-μm CMOS process has
been proposed. By using a tunable negative-feedback capacitor technology, variable gain …

Analysis and demonstration of an IIP3 improvement technique for low-power RF low-noise amplifiers

CH Chang, M Onabajo - … Transactions on Circuits and Systems I …, 2018 - ieeexplore.ieee.org
This paper describes a linearization method to enhance the third-order distortion
performance of a subthreshold common-source cascode low-noise amplifier (LNA) without …

A wideband low-noise variable-gain amplifier with a 3.4 dB NF and up to 45 dB gain tuning range in 130-nm CMOS

FD Baumgratz, C Saavedra, M Steyaert… - … on Circuits and …, 2018 - ieeexplore.ieee.org
A 130 nm CMOS wideband (0.2 to 3.3 GHz) low-noise variable-gain amplifier (LNVGA) with
two active baluns working for phase cancellation is presented herein. The LNVGA aims for a …

Design-window methodology for inductorless noise-cancelling CMOS LNAs

AD Martinez-Perez, F Aznar, D Flandre… - IEEE Access, 2022 - ieeexplore.ieee.org
This paper presents an optimization methodology for inductorless noise-cancelling CMOS
Low-Noise Amplifiers (LNA), whose performance typically depends on a tight balance in the …

A tunable ultra low power inductorless low noise amplifier exploiting body biasing of 28 nm FDSOI technology

J Zaini, F Hameau, T Taris, D Morche… - 2017 IEEE/ACM …, 2017 - ieeexplore.ieee.org
This paper presents the design of an Ultra Low Power (ULP) inductorless Low Noise
Amplifier (LNA) based on a Common Gate (CG) architecture using the back gate control of …

CMOS Front End for Interfacing Spin-Hall Nano-Oscillators for Neuromorphic Computing in the GHz Range

R Fiorelli, E Peralías, R Méndez-Romero, M Rajabali… - Electronics, 2023 - mdpi.com
Spin-Hall-effect nano-oscillators are promising beyond the CMOS devices currently
available, and can potentially be used to emulate the functioning of neurons in …