We review the technology of Ge 1− x Sn x-related group-IV semiconductor materials for
developing Si-based nanoelectronics. Ge 1− x Sn x-related materials provide novel …

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor
materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of …

An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

The electronic properties and thermal stability of centers incorporating a vacancy and a
group-V-impurity atom (P, As, Sb, or Bi) in Ge crystals have been investigated. The vacancy …

Defects in semiconductors have been studied for many years, in many cases with a view
toward controlling their behaviour through various forms of “defect engineering”. For …

The introduction of defect-related states in the bandgap of semiconductors can be both
advantageous and deleterious to conduction, and it is therefore of great importance to have …

Schottky barriers formed by depositing Au on n-type Ge have been used to study the
antimony-vacancy complex (E center). Both hole and electron transitions have been …

Germanium is an important mainstream material for many nanoelectronic and sensor
applications. The understanding of diffusion at an atomic level is important for fundamental …

Surface traps, or traps at the interface of the nanocrystal and the surrounding matrix, play an
important role in the charge retention performance of nanocrystal memory transistors. In this …

GeSn has emerged as a promising semiconductor with optoelectronic functionality in the
mid-infrared, with the potential of replacing expensive III–V technology for monolithic on-chip …