Heavy-ion radiation can result in silicon carbide power device degradation and/or
catastrophic failure. Test procedures and data interpretation must consider the impact that …

The wide bandgap semiconductors SiC and GaN are commercialized for power electronics
and for visible to UV light-emitting diodes in the case of the GaN/InGaN/AlGaN materials …

Ion-induced degradation and catastrophic failures in high-voltage SiC junction barrier
Schottky power diodes are investigated. The experimental results agree with earlier data …

We present a review of the published experimental and simulation radiation damage results
in Ga 2 O 3. All of the polytypes of Ga 2 O 3 are expected to show similar radiation …

Experimental characterization of the damage induced to SiC power MOSFETs by heavy-ion
irradiation is presented as a premise to a finite element simulation study aimed at gaining an …

Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power
diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to …

In this work, the gamma ray radiation-induced total ionizing dose (TID) effects in SiC power
MOSFETs are investigated. The transistor characteristics, such as transfer curve, output …

Radiation effects have a critical impact on the reliability of SiC and GaN power electronics
and must be understood for space and avionics applications involving exposure to various …

This article presents the results of a 2-D finite element simulation study of the gate damages
induced by heavy-ion irradiation in SiC power metal-oxide-semiconductor field-effect …

Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes
exhibits a strong dependence on the ion angle of incidence. This effect is studied …